Sebastien Couet
Overview
Explore the profile of Sebastien Couet including associated specialties, affiliations and a list of published articles.
Author names and details appear as published. Due to indexing inconsistencies, multiple individuals may share a name, and a single author may have variations. MedLuna displays this data as publicly available, without modification or verification
Snapshot
Snapshot
Articles
16
Citations
113
Followers
0
Related Specialties
Related Specialties
Top 10 Co-Authors
Top 10 Co-Authors
Published In
Published In
Affiliations
Affiliations
Soon will be listed here.
Recent Articles
1.
Vermeulen B, Soree B, Couet S, Temst K, Nguyen V
Micromachines (Basel)
. 2024 Jun;
15(6).
PMID: 38930666
Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access...
2.
Borras V, Carpenter R, Zaper L, Rao S, Couet S, Munsch M, et al.
Npj Spintron
. 2024 Jun;
2(1):14.
PMID: 38883426
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, controlling and improving distributions of device...
3.
Vudya Sethu K, Yasin F, Swerts J, Soree B, De Boeck J, Kar G, et al.
ACS Nano
. 2024 May;
18(21):13506-13516.
PMID: 38748456
Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping...
4.
Frost W, Carpenter R, Couet S, OGrady K, Fernandez G
Sci Rep
. 2023 Nov;
13(1):20490.
PMID: 37993658
The distribution of the easy-axes in an array of MRAM cells is a vital parameter to understand the switching and characteristics of the devices. By measuring the coercivity as a...
5.
Kateel V, Krizakova V, Rao S, Cai K, Gupta M, Monteiro M, et al.
Nano Lett
. 2023 Jun;
23(12):5482-5489.
PMID: 37295781
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the...
6.
Yang H, Valenzuela S, Chshiev M, Couet S, Dieny B, Dlubak B, et al.
Nature
. 2022 Jun;
606(7915):663-673.
PMID: 35732761
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large...
7.
Houben K, Jochum J, Couet S, Menendez E, Picot T, Hu M, et al.
Sci Rep
. 2020 Apr;
10(1):5729.
PMID: 32235906
The increase in superconducting transition temperature (T) of Sn nanostructures in comparison to bulk, was studied. Changes in the phonon density of states (PDOS) of the weakly coupled superconductor Sn...
8.
Grimaldi E, Krizakova V, Sala G, Yasin F, Couet S, Kar G, et al.
Nat Nanotechnol
. 2020 Jan;
15(2):111-117.
PMID: 31988509
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random access memories. To develop faster memory devices, an improvement...
9.
Vermeulen B, Ciubotaru F, Popovici M, Swerts J, Couet S, Radu I, et al.
ACS Appl Mater Interfaces
. 2019 Aug;
11(37):34385-34393.
PMID: 31449744
The recent demonstration of ferroelectricity in ultrathin HfO has kickstarted a new wave of research into this material. HfO in the orthorhombic phase can be considered the first and only...
10.
Metwalli E, Korstgens V, Schlage K, Meier R, Kaune G, Buffet A, et al.
Langmuir
. 2013 May;
29(21):6331-40.
PMID: 23679799
Cobalt sputter deposition on a nanostructured polystyrene-block-poly(ethylene oxide), P(S-b-EO), template is followed in real time with grazing incidence small-angle X-ray scattering (GISAXS). The polymer template consists of highly oriented parallel...