Two-dimensional Materials Prospects for Non-volatile Spintronic Memories

Overview

Journal Nature

Specialty Science

Date 2022 Jun 22

PMID 35732761

Authors

Hyunsoo Yang

Sergio O Valenzuela

Mairbek Chshiev

Sebastien Couet

Bernard Dieny

Bruno Dlubak

Albert Fert

Kevin Garello

Matthieu Jamet

Dae-Eun Jeong

Kangho Lee

Taeyoung Lee

Marie-Blandine Martin

Gouri Sankar Kar

Pierre Seneor

Hyeon-Jin Shin

Stephan Roche

Affiliations

Soon will be listed here.

Abstract

Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.

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