Kevin Garello
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Explore the profile of Kevin Garello including associated specialties, affiliations and a list of published articles.
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10
Citations
507
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Recent Articles
1.
Vudya Sethu K, Yasin F, Swerts J, Soree B, De Boeck J, Kar G, et al.
ACS Nano
. 2024 May;
18(21):13506-13516.
PMID: 38748456
Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping...
2.
Urrestarazu Larranaga J, Sisodia N, Guedas R, Pham V, Di Manici I, Masseboeuf A, et al.
Nano Lett
. 2024 Mar;
24(12):3557-3565.
PMID: 38499397
Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current...
3.
Kateel V, Krizakova V, Rao S, Cai K, Gupta M, Monteiro M, et al.
Nano Lett
. 2023 Jun;
23(12):5482-5489.
PMID: 37295781
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the...
4.
Grezes C, Kandazoglou A, Cosset-Cheneau M, M Vicente Arche L, Noel P, Sgarro P, et al.
Nat Commun
. 2023 May;
14(1):2590.
PMID: 37147315
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It...
5.
Shao Q, Li P, Liu L, Yang H, Fukami S, Razavi A, et al.
IEEE Trans Magn
. 2023 Apr;
57(7).
PMID: 37057056
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins...
6.
Yang H, Valenzuela S, Chshiev M, Couet S, Dieny B, Dlubak B, et al.
Nature
. 2022 Jun;
606(7915):663-673.
PMID: 35732761
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large...
7.
Grimaldi E, Krizakova V, Sala G, Yasin F, Couet S, Kar G, et al.
Nat Nanotechnol
. 2020 Jan;
15(2):111-117.
PMID: 31988509
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random access memories. To develop faster memory devices, an improvement...
8.
Baumgartner M, Garello K, Mendil J, Avci C, Grimaldi E, Murer C, et al.
Nat Nanotechnol
. 2017 Aug;
12(10):980-986.
PMID: 28825713
Current-induced spin-orbit torques are one of the most effective ways to manipulate the magnetization in spintronic devices, and hold promise for fast switching applications in non-volatile memory and logic units....
9.
Garello K, Miron I, Avci C, Freimuth F, Mokrousov Y, Blugel S, et al.
Nat Nanotechnol
. 2013 Jul;
8(8):587-93.
PMID: 23892985
Recent demonstrations of magnetization switching induced by in-plane current injection in heavy metal/ferromagnetic heterostructures have drawn increasing attention to spin torques based on orbital-to-spin momentum transfer. The symmetry, magnitude and...
10.
Miron I, Garello K, Gaudin G, Zermatten P, Costache M, Auffret S, et al.
Nature
. 2011 Aug;
476(7359):189-93.
PMID: 21804568
Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic...