Exploring Room Temperature Spin Transport Under Band Gap Opening in Bilayer Graphene

Overview

Journal Sci Rep

Specialty Science

Date 2023 Jun 26

PMID 37365221

Authors

Christopher R Anderson

Noel Natera-Cordero

Victor H Guarochico-Moreira

Irina V Grigorieva

Ivan J Vera-Marun

Affiliations

Soon will be listed here.

Abstract

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.

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