The Electron-phonon Interaction at Deep Bi Te-semiconductor Interfaces from Brillouin Light Scattering

Overview

Journal Sci Rep

Specialty Science

Date 2017 Nov 29

PMID 29180657

Citations 2

Authors

M Wiesner

A Trzaskowska

B Mroz

S Charpentier

S Wang

Y Song

F Lombardi

P Lucignano

G Benedek

D Campi

M Bernasconi

F Guinea

A Tagliacozzo

Affiliations

Soon will be listed here.

Abstract

It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick BiTe film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.

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