Robustness of Topological Order and Formation of Quantum Well States in Topological Insulators Exposed to Ambient Environment

Overview

Journal Proc Natl Acad Sci U S A

Specialty Science

Date 2012 Feb 23

PMID 22355146

Citations 16

Authors

Chaoyu Chen

Shaolong He

Hongming Weng

Wentao Zhang

Lin Zhao

Haiyun Liu

Xiaowen Jia

Daixiang Mou

Shanyu Liu

Junfeng He

Yingying Peng

Ya Feng

Zhuojin Xie

Guodong Liu

Xiaoli Dong

Jun Zhang

Xiaoyang Wang

Qinjun Peng

Zhimin Wang

Shenjin Zhang

Feng Yang

Chuangtian Chen

Zuyan Xu

Xi Dai

Zhong Fang

X J Zhou

Affiliations

Soon will be listed here.

Abstract

The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved photoemission measurements to directly probe the surface state of the prototypical topological insulators, Bi(2)Se(3) and Bi(2)Te(3), upon exposing to various environments. We find that the topological order is robust even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the exposed surface of the topological insulators. These findings provide key information in understanding the surface properties of the topological insulators under ambient environment and in engineering the topological surface state for applications.

Citing Articles

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