Tiao-Yuan Huang
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Explore the profile of Tiao-Yuan Huang including associated specialties, affiliations and a list of published articles.
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Articles
6
Citations
33
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Recent Articles
1.
Su C, Tsai T, Lin H, Huang T, Chao T
Nanoscale Res Lett
. 2012 Jun;
7(1):339.
PMID: 22726886
In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al.
2.
Su C, Su T, Tsai T, Lin H, Huang T
Nanoscale Res Lett
. 2012 Mar;
7(1):162.
PMID: 22373446
In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one...
3.
Chen W, Lin H, Lin Z, Hsu C, Huang T
Nanotechnology
. 2010 Sep;
21(43):435201.
PMID: 20876976
Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 µm were fabricated and...
4.
Lin C, Hsiao C, Hung C, Lo Y, Lee C, Su C, et al.
Chem Commun (Camb)
. 2008 Nov;
(44):5749-51.
PMID: 19009069
An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si...
5.
Hsiao C, Lin C, Hung C, Su C, Lo Y, Lee C, et al.
Biosens Bioelectron
. 2008 Sep;
24(5):1223-9.
PMID: 18760914
A simple and low-cost method to fabricate poly-silicon nanowire field effect transistor (poly-Si NW FET) for biosensing application was demonstrated. The poly-silicon nanowire (poly-Si NW) channel was fabricated by employing...
6.
Chen H, Chu T, Hsu C, Ko F, Huang T
Appl Opt
. 2002 Jul;
41(19):3961-5.
PMID: 12099606
We demonstrate an antireflective coating structure, which is based on the three-layer metal interference called the Fabry-Perot structure, for a deep-ultraviolet binary mask. The antireflective coating structure is composed of...