Ultrasensitive Detection of Dopamine Using a Polysilicon Nanowire Field-effect Transistor

Overview

Journal Chem Commun (Camb)

Publisher Royal Society of Chemistry

Specialty Chemistry

Date 2008 Nov 15

PMID 19009069

Citations 17

Authors

Chih-Heng Lin

Cheng-Yun Hsiao

Cheng-Hsiung Hung

Yen-Ren Lo

Cheng-Che Lee

Chun-Jung Su

Horng-Chin Lin

Fu-Hsiang Ko

Tiao-Yuan Huang

Yuh-Shyong Yang

Affiliations

Soon will be listed here.

Abstract

An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.

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Ramu P, Vimal S, Suresh P, Sanmugam A, Saravanakumar U, Kumar R RSC Adv. 2022; 12(24):15575-15583.

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Nanomaterial-Based Biosensors using Field-Effect Transistors: A Review.

Manimekala T, Sivasubramanian R, Dharmalingam G J Electron Mater. 2022; 51(5):1950-1973.

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