In Man Kang
Overview
Explore the profile of In Man Kang including associated specialties, affiliations and a list of published articles.
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Articles
41
Citations
22
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Recent Articles
1.
Kim M, Lee S, Park J, Bae S, Hong J, Koh W, et al.
Discov Nano
. 2025 Feb;
20(1):22.
PMID: 39928179
This study presents a novel three-dimensional stacked capacitorless dynamic random access memory (1T-DRAM) architecture, designed using a partially etched nanosheet (PE NS) to overcome the scaling limitations of traditional DRAM...
2.
Na J, Park J, Park W, Feng J, Eun J, Lee J, et al.
Nanomaterials (Basel)
. 2024 Mar;
14(5).
PMID: 38470795
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress...
3.
Lee S, Park J, Yoon Y, Kang I
Nanomaterials (Basel)
. 2024 Jan;
14(2).
PMID: 38251143
In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure....
4.
Jung U, Kim M, Jang J, Bae J, Kang I, Lee S
Adv Sci (Weinh)
. 2023 Dec;
11(9):e2307494.
PMID: 38087893
With increasing demand for wearable electronics capable of computing huge data, flexible neuromorphic systems mimicking brain functions have been receiving much attention. Despite considerable efforts in developing practical neural networks...
5.
Park W, Park J, Eun J, Lee J, Na J, Lee S, et al.
Nanomaterials (Basel)
. 2023 Aug;
13(15).
PMID: 37570549
The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This...
6.
Feng J, Jeon S, Park J, Lee S, Jang J, Kang I, et al.
Nanomaterials (Basel)
. 2023 Jun;
13(11).
PMID: 37299625
In this study, we used a low-pressure thermal annealing (LPTA) treatment to improve the switching characteristics and bias stability of zinc-tin oxide (ZTO) thin film transistors (TFTs). For this, we...
7.
Kim H, Kim M, Lee A, Park H, Jang J, Bae J, et al.
Adv Sci (Weinh)
. 2023 May;
10(19):e2300659.
PMID: 37189211
Hardware neural networks with mechanical flexibility are promising next-generation computing systems for smart wearable electronics. Several studies have been conducted on flexible neural networks for practical applications; however, developing systems...
8.
An H, Lee S, Park J, Min S, Kim G, Yoon Y, et al.
Nanomaterials (Basel)
. 2022 Oct;
12(19).
PMID: 36234653
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using technology...
9.
Park M, Kim D, An U, Jang J, Bae J, Kang I, et al.
ACS Appl Mater Interfaces
. 2022 Oct;
14(41):46819-46826.
PMID: 36194529
With an increase in the demand for smart wearable systems, artificial synapse arrays for flexible neural networks have received considerable attention. A synaptic device with a two-terminal configuration is promising...
10.
Hwang Y, Kim D, Jeon S, Wang Z, Park J, Lee S, et al.
Nanomaterials (Basel)
. 2022 Sep;
12(18).
PMID: 36144885
Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc-tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the...