In Man Kang
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Explore the profile of In Man Kang including associated specialties, affiliations and a list of published articles.
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Articles
41
Citations
22
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Recent Articles
11.
Lee S, Park J, Min S, Kim G, Jang J, Bae J, et al.
Sci Rep
. 2022 Aug;
12(1):14455.
PMID: 36002621
In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed and...
12.
Yoon Y, Lee J, Suk J, Kang I, Lee J, Lee E, et al.
Micromachines (Basel)
. 2021 Aug;
12(8).
PMID: 34442485
This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with...
13.
Seo K, Jang J, Kang I, Bae J
Materials (Basel)
. 2021 Apr;
14(6).
PMID: 33803693
In this study, we improved the photosensitivity of the lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR: 1.0-2.5 μm) photodetector by blending poly(3-hexylthiophene-2,5-diyl) (P3HT) with PbS QD. The PbS...
14.
Kim D, Park J, Vincent P, Park J, Jang J, Kang I, et al.
J Nanosci Nanotechnol
. 2021 Mar;
21(7):3847-3852.
PMID: 33715703
Top-gate amorphous indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are designed with numerical analysis to control their electron potential energy. Design simulations show the effects of structural design on...
15.
Cho M, Mun H, Lee S, An H, Park J, Jang J, et al.
J Nanosci Nanotechnol
. 2021 Mar;
21(8):4320-4324.
PMID: 33714321
In this study, a high-performance vertical gallium nitride (GaN) power transistor is designed by using two-dimensional technology computer-aided design simulator. The vertical GaN transistor is used to analyze the DC/DC...
16.
An H, Cho M, Mun H, Lee S, Park J, Jang J, et al.
J Nanosci Nanotechnol
. 2021 Mar;
21(8):4258-4267.
PMID: 33714312
In this paper, we present a capacitorless one transistor dynamic random access memory (1T-DRAM) based on a polycrystalline silicon (poly-Si) double gate MOSFET with grain boundaries (GBs). Several studies have...
17.
Lee S, Cho M, Mun H, Park J, An H, Jang J, et al.
J Nanosci Nanotechnol
. 2021 Mar;
21(8):4235-4242.
PMID: 33714309
In this paper, a 1T-DRAM based on the junctionless field-effect transistor (JLFET) with a silicon-germanium (SiGe) and silicon (Si) nanotube structure was designed and investigated by using technology computer-aided design...
18.
Lee S, Cho M, Jung J, Jang W, Mun H, Jang J, et al.
J Nanosci Nanotechnol
. 2021 Mar;
21(8):4223-4229.
PMID: 33714307
In this paper, a 1T-DRAM based on the junctionless field-effect transistor (JLFET) with an ultrathin polycrystalline silicon layer was designed and investigated by using technology computer-aided design simulation (TCAD). The...
19.
Yoon Y, Lee J, Kang I, Lee J, Kim D
Micromachines (Basel)
. 2020 Dec;
11(12).
PMID: 33322847
In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (P)....
20.
Lee S, Cho M, Jung J, Jang W, Mun H, Jang J, et al.
J Nanosci Nanotechnol
. 2020 Jul;
20(11):6632-6637.
PMID: 32604487
In this paper, we adopt the vertical core-shell nanowire field-effect transistors based on the Silicon-germanium (SiGe)/strained-silicon (strained-Si) layer as a method to improve the performance of the CMOS logic inverter...