Designing an Ultrathin Film Spectrometer Based on III-Nitride Light-Absorbing Nanostructures

Overview

Journal Micromachines (Basel)

Publisher MDPI

Date 2021 Jul 2

PMID 34203175

Citations 2

Authors

Juhyeon Kim

Srinivasa Cheekati

Tuba Sarwar

Pei-Cheng Ku

Affiliations

Soon will be listed here.

Abstract

In this paper, a spectrometer design enabling an ultrathin form factor is proposed. Local strain engineering in group III-nitride semiconductor nanostructured light-absorbing elements enables the integration of a large number of photodetectors on the chip exhibiting different absorption cut-off wavelengths. The introduction of a simple cone-shaped back-reflector at the bottom side of the substrate enables a high light-harvesting efficiency design, which also improves the accuracy of spectral reconstruction. The cone-shaped back-reflector can be readily fabricated using mature patterned sapphire substrate processes. Our design was validated via numerical simulations with experimentally measured photodetector responsivities as the input. A light-harvesting efficiency as high as 60% was achieved with five InGaN/GaN multiple quantum wells for the visible wavelengths.

Citing Articles

Fabrication of Silver Nanobowl Arrays on Patterned Sapphire Substrate for Surface-Enhanced Raman Scattering.

Pang Y, Jin M Micromachines (Basel). 2023; 14(6).

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Ultrathin Optics-Free Spectrometer with Monolithically Integrated LED Excitation.

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