Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D VdW Heterostructure Based Photodetector

Overview

Journal Adv Sci (Weinh)

Specialty Biomedical Engineering

Date 2021 May 20

PMID 34014610

Citations 4

Authors

Huide Wang

Shan Gao

Feng Zhang

Fanxu Meng

Zhinan Guo

Rui Cao

Yonghong Zeng

Jinlai Zhao

Si Chen

Haiguo Hu

Yu-Jia Zeng

Sung Jin Kim

Dianyuan Fan

Han Zhang

Paras N Prasad

Affiliations

Soon will be listed here.

Abstract

Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first-time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe-based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high-performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.

Citing Articles

Auger Recombination and Carrier-Surface Optical Phonon Interaction in Van Der Waals Heterostructures Composed of Graphene and 2D Transition Metal Chalcogenides.

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