Highly Emissive Self-Trapped Excitons in Fully Inorganic Zero-Dimensional Tin Halides

Overview

Journal Angew Chem Int Ed Engl

Specialty Chemistry

Date 2018 Jul 13

PMID 29999575

Citations 31

Authors

Bogdan M Benin

Dmitry N Dirin

Viktoriia Morad

Michael Worle

Sergii Yakunin

Gabriele Raino

Olga Nazarenko

Markus Fischer

Ivan Infante

Maksym V Kovalenko

Affiliations

Soon will be listed here.

Abstract

The spatial localization of charge carriers to promote the formation of bound excitons and concomitantly enhance radiative recombination has long been a goal for luminescent semiconductors. Zero-dimensional materials structurally impose carrier localization and result in the formation of localized Frenkel excitons. Now the fully inorganic, perovskite-derived zero-dimensional Sn material Cs SnBr is presented that exhibits room-temperature broad-band photoluminescence centered at 540 nm with a quantum yield (QY) of 15±5 %. A series of analogous compositions following the general formula Cs A Sn(Br I ) (A=Rb, K; x≤1, y≤1) can be prepared. The emission of these materials ranges from 500 nm to 620 nm with the possibility to compositionally tune the Stokes shift and the self-trapped exciton emission bands.

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