Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Overview

Journal Nat Nanotechnol

Specialty Biotechnology

Date 2016 Jun 9

PMID 27271965

Citations 8

Authors

M Usman

J Bocquel

J Salfi

B Voisin

A Tankasala

R Rahman

M Y Simmons

S Rogge

L C L Hollenberg

Affiliations

Soon will be listed here.

Abstract

Scaling of Si-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but also by their positions in the crystal. Determination of the precise dopant location is an unsolved problem in applications from channel doping in ultrascaled transistors to quantum information processing. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pinpoint the exact coordinates of the dopant in the Si crystal. The technique is underpinned by the observation that STM images contain atomic-sized features in ordered patterns that are highly sensitive to the STM tip orbital and the absolute dopant lattice site. The demonstrated ability to determine the locations of P and As dopants to 5 nm depths will provide critical information for the design and optimization of nanoscale devices for classical and quantum computing applications.

Citing Articles

Challenges to extracting spatial information about double P dopants in Si from STM images.

Rozanski P, Bryant G, Zielinski M Sci Rep. 2024; 14(1):18062.

PMID: 39103369 PMC: 11300915. DOI: 10.1038/s41598-024-67903-z.

Atomically Precise Manufacturing of Silicon Electronics.

Pitters J, Croshaw J, Achal R, Livadaru L, Ng S, Lupoiu R ACS Nano. 2024; 18(9):6766-6816.

PMID: 38376086 PMC: 10919096. DOI: 10.1021/acsnano.3c10412.

Valley interference and spin exchange at the atomic scale in silicon.

Voisin B, Bocquel J, Tankasala A, Usman M, Salfi J, Rahman R Nat Commun. 2020; 11(1):6124.

PMID: 33257680 PMC: 7705737. DOI: 10.1038/s41467-020-19835-1.

Addressable electron spin resonance using donors and donor molecules in silicon.

Hile S, Fricke L, House M, Peretz E, Chen C, Wang Y Sci Adv. 2018; 4(7):eaaq1459.

PMID: 30027114 PMC: 6044739. DOI: 10.1126/sciadv.aaq1459.

Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers.

Wang X, Hagmann J, Namboodiri P, Wyrick J, Li K, Murray R Nanoscale. 2018; 10(9):4488-4499.

PMID: 29459919 PMC: 11305481. DOI: 10.1039/c7nr07777g.

References

Chen . Tunneling matrix elements in three-dimensional space: The derivative rule and the sum rule. Phys Rev B Condens Matter. 1990; 42(14):8841-8857. DOI: 10.1103/physrevb.42.8841. View

Averin , Korotkov , Likharev . Theory of single-electron charging of quantum wells and dots. Phys Rev B Condens Matter. 1991; 44(12):6199-6211. DOI: 10.1103/physrevb.44.6199. View

Mohiyaddin F, Rahman R, Kalra R, Klimeck G, Hollenberg L, Pla J . Noninvasive spatial metrology of single-atom devices. Nano Lett. 2013; 13(5):1903-9. DOI: 10.1021/nl303863s. View

Pla J, Tan K, Dehollain J, Lim W, Morton J, Zwanenburg F . High-fidelity readout and control of a nuclear spin qubit in silicon. Nature. 2013; 496(7445):334-8. DOI: 10.1038/nature12011. View

Tyryshkin A, Tojo S, Morton J, Riemann H, Abrosimov N, Becker P . Electron spin coherence exceeding seconds in high-purity silicon. Nat Mater. 2011; 11(2):143-7. DOI: 10.1038/nmat3182. View

Keizer J, McKibbin S, Simmons M . The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers. ACS Nano. 2015; 9(7):7080-4. DOI: 10.1021/acsnano.5b01638. View

Rahman R, Wellard C, Bradbury F, Prada M, Cole J, Klimeck G . High precision quantum control of single donor spins in silicon. Phys Rev Lett. 2007; 99(3):036403. DOI: 10.1103/PhysRevLett.99.036403. View

Muhonen J, Dehollain J, Laucht A, Hudson F, Kalra R, Sekiguchi T . Storing quantum information for 30 seconds in a nanoelectronic device. Nat Nanotechnol. 2014; 9(12):986-91. DOI: 10.1038/nnano.2014.211. View

Fuechsle M, Miwa J, Mahapatra S, Ryu H, Lee S, Warschkow O . A single-atom transistor. Nat Nanotechnol. 2012; 7(4):242-6. DOI: 10.1038/nnano.2012.21. View

10.

Voisin B, Salfi J, Bocquel J, Rahman R, Rogge S . Spatially resolved resonant tunneling on single atoms in silicon. J Phys Condens Matter. 2015; 27(15):154203. DOI: 10.1088/0953-8984/27/15/154203. View

11.

Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S . Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. J Phys Condens Matter. 2015; 27(15):154207. DOI: 10.1088/0953-8984/27/15/154207. View

12.

Ho J, Yerushalmi R, Jacobson Z, Fan Z, Alley R, Javey A . Controlled nanoscale doping of semiconductors via molecular monolayers. Nat Mater. 2007; 7(1):62-7. DOI: 10.1038/nmat2058. View

13.

Salfi J, Mol J, Rahman R, Klimeck G, Simmons M, Hollenberg L . Spatially resolving valley quantum interference of a donor in silicon. Nat Mater. 2014; 13(6):605-10. DOI: 10.1038/nmat3941. View

14.

Weber B, Mahapatra S, Ryu H, Lee S, Fuhrer A, Reusch T . Ohm's law survives to the atomic scale. Science. 2012; 335(6064):64-7. DOI: 10.1126/science.1214319. View

15.

Laucht A, Muhonen J, Mohiyaddin F, Kalra R, Dehollain J, Freer S . Electrically controlling single-spin qubits in a continuous microwave field. Sci Adv. 2015; 1(3):e1500022. PMC: 4640634. DOI: 10.1126/sciadv.1500022. View

16.

Ionescu A, Riel H . Tunnel field-effect transistors as energy-efficient electronic switches. Nature. 2011; 479(7373):329-37. DOI: 10.1038/nature10679. View

17.

Dehollain J, Simmons S, Muhonen J, Kalra R, Laucht A, Hudson F . Bell's inequality violation with spins in silicon. Nat Nanotechnol. 2015; 11(3):242-6. DOI: 10.1038/nnano.2015.262. View

18.

Pierre M, Wacquez R, Jehl X, Sanquer M, Vinet M, Cueto O . Single-donor ionization energies in a nanoscale CMOS channel. Nat Nanotechnol. 2009; 5(2):133-7. DOI: 10.1038/nnano.2009.373. View

19.

Sarkar D, Xie X, Liu W, Cao W, Kang J, Gong Y . A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature. 2015; 526(7571):91-5. DOI: 10.1038/nature15387. View

20.

Hill C, Peretz E, Hile S, House M, Fuechsle M, Rogge S . A surface code quantum computer in silicon. Sci Adv. 2015; 1(9):e1500707. PMC: 4646824. DOI: 10.1126/sciadv.1500707. View