A Two-dimensional ON/OFF Switching Device Based on Anisotropic Interactions of Atomic Quantum Dots on Si(100):H

Overview

Journal Nat Commun

Specialty Biology

Date 2017 Dec 22

PMID 29263380

Citations 3

Authors

Mayssa Yengui

Eric Duverger

Philippe Sonnet

Damien Riedel

Affiliations

Soon will be listed here.

Abstract

Controlling the properties of quantum dots at the atomic scale, such as dangling bonds, is a general motivation as they allow studying various nanoscale processes including atomic switches, charge storage, or low binding energy state interactions. Adjusting the coupling of individual silicon dangling bonds to form a 2D device having a defined function remains a challenge. Here, we exploit the anisotropic interactions between silicon dangling bonds on n-type doped Si(100):H surface to tune their hybridization. This process arises from interactions between the subsurface silicon network and dangling bonds inducing a combination of Jahn-Teller distortions and local charge ordering. A three-pointed star-shaped device prototype is designed. By changing the charge state of this device, its electronic properties are shown to switch reversibly from an ON to an OFF state via local change of its central gap. Our results provide a playground for the study of quantum information at the nanoscale.

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References

Kolmer M, Zuzak R, Dridi G, Godlewski S, Joachim C, Szymonski M . Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface. Nanoscale. 2015; 7(29):12325-30. DOI: 10.1039/c5nr01912e. View

Perdew , Burke , Ernzerhof . Generalized Gradient Approximation Made Simple. Phys Rev Lett. 1996; 77(18):3865-3868. DOI: 10.1103/PhysRevLett.77.3865. View

Bellec A, Riedel D, Dujardin G, Boudrioua O, Chaput L, Stauffer L . Nonlocal activation of a bistable atom through a surface state charge-transfer process on Si(100)-(2×1):H. Phys Rev Lett. 2010; 105(4):048302. DOI: 10.1103/PhysRevLett.105.048302. View

Kleshchonok A, Gutierrez R, Joachim C, Cuniberti G . Quantum interference based Boolean gates in dangling bond loops on Si(100):H surfaces. Sci Rep. 2015; 5:14136. PMC: 4642695. DOI: 10.1038/srep14136. View

Troullier , Martins . Efficient pseudopotentials for plane-wave calculations. Phys Rev B Condens Matter. 1991; 43(3):1993-2006. DOI: 10.1103/physrevb.43.1993. View

McEllistrem , HAASE , Chen , Hamers . Electrostatic sample-tip interactions in the scanning tunneling microscope. Phys Rev Lett. 1993; 70(16):2471-2474. DOI: 10.1103/PhysRevLett.70.2471. View

Bohloul S, Shi Q, Wolkow R, Guo H . Quantum Transport in Gated Dangling-Bond Atomic Wires. Nano Lett. 2017; 17(1):322-327. DOI: 10.1021/acs.nanolett.6b04125. View

Kepenekian M, Robles R, Joachim C, Lorente N . Surface-state engineering for interconnects on H-passivated Si(100). Nano Lett. 2013; 13(3):1192-5. DOI: 10.1021/nl304611m. View

Ordejon , Artacho , SOLER . Self-consistent order-N density-functional calculations for very large systems. Phys Rev B Condens Matter. 1996; 53(16):R10441-R10444. DOI: 10.1103/physrevb.53.r10441. View

10.

Kitchen D, Richardella A, Tang J, Flatte M, Yazdani A . Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions. Nature. 2006; 442(7101):436-9. DOI: 10.1038/nature04971. View

11.

Martin M, Lastapis M, Riedel D, Dujardin G, Mamatkulov M, Stauffer L . Mastering the molecular dynamics of a bistable molecule by single atom manipulation. Phys Rev Lett. 2006; 97(21):216103. DOI: 10.1103/PhysRevLett.97.216103. View

12.

Fuechsle M, Miwa J, Mahapatra S, Ryu H, Lee S, Warschkow O . A single-atom transistor. Nat Nanotechnol. 2012; 7(4):242-6. DOI: 10.1038/nnano.2012.21. View

13.

Ushakov A, Streltsov S, Khomskii D . Crystal field splitting in correlated systems with negative charge-transfer gap. J Phys Condens Matter. 2011; 23(44):445601. DOI: 10.1088/0953-8984/23/44/445601. View

14.

Godlewski S, Kawai H, Kolmer M, Zuzak R, Echavarren A, Joachim C . Single-Molecule Rotational Switch on a Dangling Bond Dimer Bearing. ACS Nano. 2016; 10(9):8499-507. DOI: 10.1021/acsnano.6b03590. View

15.

Pennec Y, Horn von Hoegen M, Zhu X, Fortin D, Freeman M . Dynamics of an Ising chain under local excitation: a scanning tunneling microscopy study of Si(100) dimer rows at 5 K. Phys Rev Lett. 2006; 96(2):026102. DOI: 10.1103/PhysRevLett.96.026102. View

16.

Taucer M, Livadaru L, Piva P, Achal R, Labidi H, Pitters J . Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface. Phys Rev Lett. 2014; 112(25):256801. DOI: 10.1103/PhysRevLett.112.256801. View

17.

Bellec A, Ample F, Riedel D, Dujardin G, Joachim C . Imaging molecular orbitals by scanning tunneling microscopy on a passivated semiconductor. Nano Lett. 2008; 9(1):144-7. DOI: 10.1021/nl802688g. View

18.

Yengui M, Pinto H, Leszczynski J, Riedel D . Atomic scale study of corrugating and anticorrugating states on the bare Si(1 0 0) surface. J Phys Condens Matter. 2014; 27(4):045001. DOI: 10.1088/0953-8984/27/4/045001. View

19.

Kepenekian M, Robles R, Rurali R, Lorente N . Spin transport in dangling-bond wires on doped H-passivated Si(100). Nanotechnology. 2014; 25(46):465703. DOI: 10.1088/0957-4484/25/46/465703. View

20.

Schofield S, Studer P, Hirjibehedin C, Curson N, Aeppli G, Bowler D . Quantum engineering at the silicon surface using dangling bonds. Nat Commun. 2013; 4:1649. PMC: 3644071. DOI: 10.1038/ncomms2679. View