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Su-Hui Lin

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Articles 8
Citations 5
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Recent Articles
1.
Shen M, Chen J, Tseng M, Lai S, Zhang Z, Zheng L, et al.
Opt Express . 2024 Jun; 32(11):18508-18515. PMID: 38859004
In this study, AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) processed via standard laser dicing (SLD) and multifocal laser stealth dicing (MFLSD) were investigated. Adopting the MFLSD technology would generate a roughing...
2.
Li S, Shen M, Lai S, Dai Y, Chen J, Zheng L, et al.
Opt Express . 2023 Nov; 31(22):36547-36556. PMID: 38017804
The effects of different p-GaN layer thickness on the photoelectric and thermal properties of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were investigated. The results revealed that appropriate thinning of the p-GaN...
3.
Peng K, Tseng M, Lin S, Lai S, Shen M, Wuu D, et al.
Opt Express . 2022 Dec; 30(26):47792-47800. PMID: 36558698
In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with...
4.
Hsu Y, Peng K, Lin Y, Tseng M, Lin S, Shen M, et al.
Opt Express . 2022 Nov; 30(23):42241-42248. PMID: 36366681
This study fabricated high-voltage, low-current DUV-LEDs by connecting two devices. Due to better current spreading and the enhanced reflective mirror effect, high-voltage devices present a higher dynamic resistance, emission output...
5.
Lin S, Tseng M, Horng R, Lai S, Peng K, Shen M, et al.
Opt Express . 2022 Oct; 30(10):16827-16836. PMID: 36221517
This study utilized thin p-GaN, indium tin oxide (ITO), and a reflective passivation layer (RPL) to improve the performance of deep ultra-violet light-emitting diodes (DUV-LEDs). RPL reflectors, which comprise HfO/SiO...
6.
Yeh Y, Lin S, Hsu T, Lai S, Lee P, Lien S, et al.
Nanoscale Res Lett . 2022 Feb; 17(1):25. PMID: 35129724
No abstract available.
7.
Lin S, Tseng M, Peng K, Lai S, Shen M, Horng R, et al.
Opt Express . 2021 Nov; 29(23):37835-37844. PMID: 34808848
In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO/SiO stacks as distributed Bragg reflectors, which are deposited on...
8.
Yeh Y, Lin S, Hsu T, Lai S, Lee P, Lien S, et al.
Nanoscale Res Lett . 2021 Nov; 16(1):164. PMID: 34792678
In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since...