Shouqiang Lai
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Explore the profile of Shouqiang Lai including associated specialties, affiliations and a list of published articles.
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11
Citations
8
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Recent Articles
1.
Deng Y, Li D, Dai Y, Lin Z, Lin Y, Liu Z, et al.
Nanotechnology
. 2025 Feb;
36(15).
PMID: 39977956
In this study, green micro-light-emitting diodes (-LEDs) with AlOlayers of varying thicknesses (0, 30, 60, and 90 nm) was fabricated using atomic layer deposition (ALD) technology. The optoelectronic characteristics of...
2.
Zhao M, Lin Y, Lai C, Lu T, Lai S, Wang S, et al.
Opt Lett
. 2025 Jan;
50(3):824-827.
PMID: 39888764
An efficient pre-strained layer structure is proposed, which combines a pre-layer with a pre-well, to prepare a 2 × 3 InGaN green micro-light-emitting-diode (μ-LED) device array with a diameter of...
3.
Lu T, Dai Y, Lee T, Wang S, Guo W, Lai S, et al.
Opt Lett
. 2024 Aug;
49(16):4697-4700.
PMID: 39146142
Micro-light-emitting diodes (µLEDs) hold significant promise for applications in displays and visible light communication (VLC). This study substantiates the viability of a wavelength division multiplexing (WDM)-VLC system using InGaN blue,...
4.
Shen M, Chen J, Tseng M, Lai S, Zhang Z, Zheng L, et al.
Opt Express
. 2024 Jun;
32(11):18508-18515.
PMID: 38859004
In this study, AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) processed via standard laser dicing (SLD) and multifocal laser stealth dicing (MFLSD) were investigated. Adopting the MFLSD technology would generate a roughing...
5.
Lu T, Lee T, Lai S, Dai Y, Wu R, Gong Z, et al.
Opt Lett
. 2024 Feb;
49(4):883-886.
PMID: 38359207
A composite strain-modulation strategy to achieve high-performing green µ-LED devices for visible light communication is proposed. Compared with the conventional pre-well structure, introducing a pre-layer to enlarge the lateral lattice...
6.
Li S, Shen M, Lai S, Dai Y, Chen J, Zheng L, et al.
Opt Express
. 2023 Nov;
31(22):36547-36556.
PMID: 38017804
The effects of different p-GaN layer thickness on the photoelectric and thermal properties of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were investigated. The results revealed that appropriate thinning of the p-GaN...
7.
Guo Z, Li Z, Lai S, Hou X, Fan X, Zhong C, et al.
Nanotechnology
. 2023 May;
34(33).
PMID: 37192605
The temperature-dependent external quantum efficiency (EQE) droops of 265 nm, 275 nm, 280 nm, and 285 nm AlGaN-based ultraviolet-c light-emitting diodes (UVC-LEDs) differed in Al contents have been comprehensively investigated....
8.
Peng K, Tseng M, Lin S, Lai S, Shen M, Wuu D, et al.
Opt Express
. 2022 Dec;
30(26):47792-47800.
PMID: 36558698
In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with...
9.
Lin S, Tseng M, Horng R, Lai S, Peng K, Shen M, et al.
Opt Express
. 2022 Oct;
30(10):16827-16836.
PMID: 36221517
This study utilized thin p-GaN, indium tin oxide (ITO), and a reflective passivation layer (RPL) to improve the performance of deep ultra-violet light-emitting diodes (DUV-LEDs). RPL reflectors, which comprise HfO/SiO...
10.
Yeh Y, Lin S, Hsu T, Lai S, Lee P, Lien S, et al.
Nanoscale Res Lett
. 2022 Feb;
17(1):25.
PMID: 35129724
No abstract available.