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Robert M Farrell

Explore the profile of Robert M Farrell including associated specialties, affiliations and a list of published articles. Areas
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Articles 16
Citations 51
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Recent Articles
1.
Myzaferi A, Mughal A, Cohen D, Farrell R, Nakamura S, Speck J, et al.
Opt Express . 2018 May; 26(10):12490-12498. PMID: 29801286
We report continuous-wave (CW) blue semipolar (202¯1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates...
2.
Alhassan A, Young N, Farrell R, Pynn C, Wu F, Alyamani A, et al.
Opt Express . 2018 Mar; 26(5):5591-5601. PMID: 29529761
The effect of employing an AlGaN cap layer in the active region of green c-plane light-emitting diodes (LEDs) was studied. Each quantum well (QW) and barrier in the active region...
3.
Lee C, Shen C, Cozzan C, Farrell R, Speck J, Nakamura S, et al.
Opt Express . 2017 Aug; 25(15):17480-17487. PMID: 28789239
Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser...
4.
Myzaferi A, Reading A, Farrell R, Cohen D, Nakamura S, DenBaars S
Opt Express . 2017 Aug; 25(15):16922-16930. PMID: 28789192
Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using...
5.
Kowsz S, Young E, Yonkee B, Pynn C, Farrell R, Speck J, et al.
Opt Express . 2017 Mar; 25(4):3841-3849. PMID: 28241595
We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher...
6.
Hwang D, Yonkee B, Addin B, Farrell R, Nakamura S, Speck J, et al.
Opt Express . 2016 Nov; 24(20):22875-22880. PMID: 27828354
We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical...
7.
Alhassan A, Farrell R, Saifaddin B, Mughal A, Wu F, DenBaars S, et al.
Opt Express . 2016 Aug; 24(16):17868-73. PMID: 27505754
We demonstrate very high luminous efficacy green light-emitting diodes employing AlGaN cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and...
8.
Cantore M, Pfaff N, Farrell R, Speck J, Nakamura S, DenBaars S
Opt Express . 2016 Feb; 24(2):A215-21. PMID: 26832576
The efficiency droop of light emitting diodes (LEDs) with increasing current density limits the amount of light emitted per wafer area. Since low current densities are required for high efficiency...
9.
Lee C, Shen C, Oubei H, Cantore M, Janjua B, Ng T, et al.
Opt Express . 2015 Dec; 23(23):29779-87. PMID: 26698461
We demonstrate data transmission of unfiltered white light generated by direct modulation of a blue gallium nitride (GaN) laser diode (LD) exciting YAG:Ce phosphors. 1.1 GHz of modulation bandwidth was...
10.
Lee C, Zhang C, Cantore M, Farrell R, Oh S, Margalith T, et al.
Opt Express . 2015 Jul; 23(12):16232-7. PMID: 26193595
We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a...