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James S Speck

Explore the profile of James S Speck including associated specialties, affiliations and a list of published articles. Areas
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Articles 39
Citations 164
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Recent Articles
1.
Wong M, Trageser E, Zhang H, Chang H, Gee S, Tak T, et al.
Opt Express . 2024 Jun; 32(12):20483-20490. PMID: 38859429
A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet lasers on freestanding m-plane GaN substrates....
2.
Ewing J, Lynsky C, Wong M, Wu F, Chow Y, Shapturenka P, et al.
Opt Express . 2023 Dec; 31(25):41351-41360. PMID: 38087536
Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of...
3.
Yao Y, Li H, Wang M, Li P, Lam M, Iza M, et al.
Opt Express . 2023 Sep; 31(18):28649-28657. PMID: 37710681
AlGaN-based UV-A LEDs have wide applications in medical treatment and chemical sensing; however, their efficiencies are still far behind visible LEDs or even shorter wavelengths UV-C counterparts because of the...
4.
Li P, Li H, Yao Y, Qwah K, Iza M, Speck J, et al.
Opt Express . 2023 Mar; 31(5):7572-7578. PMID: 36859886
We demonstrate vertical integration of nitride-based blue/green micro-light-emitting diodes (µLEDs) stacks with independent junctions control using hybrid tunnel junction (TJ). The hybrid TJ was gown by metal organic chemical vapor...
5.
Sauty M, Lopes N, Banon J, Lassailly Y, Martinelli L, Alhassan A, et al.
Phys Rev Lett . 2022 Dec; 129(21):216602. PMID: 36461952
Near-band-gap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples with more than 5% of indium...
6.
Li P, Li H, Yao Y, Zhang H, Lynsky C, Qwah K, et al.
Opt Express . 2021 Jul; 29(14):22001-22007. PMID: 34265974
In this work, we present fully transparent metal organic chemical vapor deposition (MOCVD)-grown InGaN cascaded micro-light-emitting diodes (µLEDs) with independent junction control. The cascaded µLEDs consisted of a blue emitting...
7.
Chow Y, Lee C, Wong M, Wu Y, Nakamura S, DenBaars S, et al.
Opt Express . 2020 Aug; 28(16):23796-23805. PMID: 32752371
We reported significant improvements in device speed by reducing the quantum barrier (QB) thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB bandwidth of 700 MHz was...
8.
Khoury M, Li H, Bonef B, Mates T, Wu F, Li P, et al.
Opt Express . 2020 Jul; 28(12):18150-18159. PMID: 32680016
We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observations,...
9.
Li P, Zhang H, Li H, Iza M, Yao Y, Wong M, et al.
Opt Express . 2020 Jul; 28(13):18707-18712. PMID: 32672165
High performance InGaN micro-size light-emitting diodes (µLEDs) with epitaxial tunnel junctions (TJs) were successfully demonstrated using selective area growth (SAG) by metalorganic chemical vapor deposition (MOCVD). Patterned n + GaN/n-GaN...
10.
Li H, Li P, Zhang H, Chow Y, Wong M, Pinna S, et al.
Opt Express . 2020 May; 28(9):13569-13575. PMID: 32403828
We demonstrate a simple method to fabricate efficient, electrically driven, polarized, and phosphor-free white semipolar (20-21) InGaN light-emitting diodes (LEDs) by adopting a top blue quantum well (QW) and a...