Nguyen Huynh Duy Khang
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Explore the profile of Nguyen Huynh Duy Khang including associated specialties, affiliations and a list of published articles.
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5
Citations
45
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0
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Recent Articles
1.
Goel S, Khang N, Osada Y, Anh L, Hai P, Tanaka M
Sci Rep
. 2023 Feb;
13(1):2181.
PMID: 36750728
Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of...
2.
Fan T, Khang N, Nakano S, Hai P
Sci Rep
. 2022 Feb;
12(1):2998.
PMID: 35194059
Spin orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high...
3.
Shirokura T, Fan T, Khang N, Kondo T, Hai P
Sci Rep
. 2022 Feb;
12(1):2426.
PMID: 35165335
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (θ > ...
4.
Khang N, Nakano S, Shirokura T, Miyamoto Y, Hai P
Sci Rep
. 2020 Jul;
10(1):12185.
PMID: 32699260
The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power spintronic devices. However, evaluation of the spin Hall angle and spin-orbit torque (SOT) of TIs is...
5.
Khang N, Ueda Y, Hai P
Nat Mater
. 2018 Aug;
17(9):808-813.
PMID: 30061731
Spin-orbit torque switching using the spin Hall effect in heavy metals and topological insulators has a great potential for ultralow power magnetoresistive random-access memory. To be competitive with conventional spin-transfer...