Room-temperature Spin Injection from a Ferromagnetic Semiconductor

Overview

Journal Sci Rep

Specialty Science

Date 2023 Feb 8

PMID 36750728

Authors

Shobhit Goel

Nguyen Huynh Duy Khang

Yuki Osada

Le Duc Anh

Pham Nam Hai

Masaaki Tanaka

Affiliations

Soon will be listed here.

Abstract

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.

Citing Articles

Controlling Magnetization in Ferromagnetic Semiconductors by Current-Induced Spin-Orbit Torque.

Lee S, Liu X, Furdyna J Materials (Basel). 2025; 18(2).

PMID: 39859743 PMC: 11766832. DOI: 10.3390/ma18020271.

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