Abdellah Kouzou
Overview
Explore the profile of Abdellah Kouzou including associated specialties, affiliations and a list of published articles.
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Articles
5
Citations
15
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Recent Articles
1.
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M
Micromachines (Basel)
. 2025 Jan;
16(1.
PMID: 39858689
Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance....
2.
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M
Nanomaterials (Basel)
. 2024 Dec;
14(24).
PMID: 39728574
In this paper, a new label-free DNA nanosensor based on a top-gated (TG) metal-ferroelectric-metal (MFM) graphene nanoribbon field-effect transistor (TG-MFM GNRFET) is proposed through a simulation approach. The DNA sensing...
3.
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M
Nanomaterials (Basel)
. 2024 Jun;
14(11).
PMID: 38869587
This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the self-consistent solution...
4.
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M
Nanomaterials (Basel)
. 2024 Jan;
14(2).
PMID: 38276738
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based...
5.
Tamersit K, Madan J, Kouzou A, Pandey R, Kennel R, Abdelrahem M
Nanomaterials (Basel)
. 2022 May;
12(10).
PMID: 35630861
In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed using a rigorous quantum simulation. This latter self-consistently solves the...
6.
Tamersit K, Kouzou A, Bourouba H, Kennel R, Abdelrahem M
Nanomaterials (Basel)
. 2022 Feb;
12(3).
PMID: 35159807
The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance...