Dualistic Insulator States in 1T-TaS Crystals

Overview

Journal Nat Commun

Specialty Biology

Date 2024 Apr 23

PMID 38653984

Authors

Yihao Wang

Zhihao Li

Xuan Luo

Jingjing Gao

Yuyan Han

Jialiang Jiang

Jin Tang

Huanxin Ju

Tongrui Li

Run Lv

Shengtao Cui

Yingguo Yang

Yuping Sun

Junfa Zhu

Xingyu Gao

Wenjian Lu

Zhe Sun

Hai Xu

Yimin Xiong

Liang Cao

Affiliations

Soon will be listed here.

Abstract

While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a "three-dimensional" control for the era of slidetronics.

Citing Articles

Janus Monolayer of 1T-TaSSe: A Computational Study.

Szalowski K Materials (Basel). 2024; 17(18).

PMID: 39336331 PMC: 11433230. DOI: 10.3390/ma17184591.

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