2D Halide Perovskites for High-Performance Resistive Switching Memory and Artificial Synapse Applications

Overview

Journal Adv Sci (Weinh)

Specialty Biomedical Engineering

Date 2024 Apr 22

PMID 38647431

Authors

Bixin Li

Fei Xia

Bin Du

Shiyang Zhang

Lan Xu

Qiong Su

Dingke Zhang

Junliang Yang

Affiliations

Soon will be listed here.

Abstract

Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high-density, low-cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic properties including large light absorption coefficient, fast ion migration, long carrier diffusion length, low trap density, high defect tolerance. Among MHPs, 2D halide perovskites have exotic layered structure and great environment stability as compared with 3D counterparts. Herein, recent advances of 2D MHPs for the RS memories and artificial synapses realms are comprehensively summarized and discussed, as well as the layered structure properties and the related physical mechanisms are presented. Furthermore, the current issues and developing roadmap for the next-generation 2D MHPs RS memories and artificial synapse are elucidated.

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2D Halide Perovskites for High-Performance Resistive Switching Memory and Artificial Synapse Applications.

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PMID: 38647431 PMC: 11187899. DOI: 10.1002/advs.202310263.

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