Strong Room-Temperature Ferromagnetism of MoS Compound Produced by Defect Generation

Overview

Journal Nanomaterials (Basel)

Date 2024 Feb 23

PMID 38392707

Authors

Chang-Soo Park

Younghae Kwon

Youjoong Kim

Hak Dong Cho

Heetae Kim

Woochul Yang

Deuk Young Kim

Affiliations

Soon will be listed here.

Abstract

Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS. The pristine MoS exhibits diamagnetic properties from low-to-room temperature. However, MoS compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).

References

PRINZ . Magnetoelectronics . Science. 1998; 282(5394):1660-3. DOI: 10.1126/science.282.5394.1660. View

Ganatra R, Zhang Q . Few-layer MoS2: a promising layered semiconductor. ACS Nano. 2014; 8(5):4074-99. DOI: 10.1021/nn405938z. View

Wang Y, Wang J, Ding C, Zhang H, Du R, Zhang S . Laser-induced phenylation reaction to prepare semiconducting single-walled carbon nanotube arrays. Chem Commun (Camb). 2020; 56(91):14259-14262. DOI: 10.1039/d0cc06095j. View

Li Y, Zhou Z, Zhang S, Chen Z . MoS2 nanoribbons: high stability and unusual electronic and magnetic properties. J Am Chem Soc. 2009; 130(49):16739-44. DOI: 10.1021/ja805545x. View

Shidpour R, Manteghian M . A density functional study of strong local magnetism creation on MoS2 nanoribbon by sulfur vacancy. Nanoscale. 2010; 2(8):1429-35. DOI: 10.1039/b9nr00368a. View

Wu W, Wang L, Li Y, Zhang F, Lin L, Niu S . Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature. 2014; 514(7523):470-4. DOI: 10.1038/nature13792. View

Zhang K, Feng S, Wang J, Azcatl A, Lu N, Addou R . Manganese Doping of Monolayer MoS2: The Substrate Is Critical. Nano Lett. 2015; 15(10):6586-91. DOI: 10.1021/acs.nanolett.5b02315. View

Ohno . Making nonmagnetic semiconductors ferromagnetic . Science. 1998; 281(5379):951-5. DOI: 10.1126/science.281.5379.951. View

Wang Y, Li S, Yi J . Electronic and magnetic properties of Co doped MoS2 monolayer. Sci Rep. 2016; 6:24153. PMC: 4823719. DOI: 10.1038/srep24153. View

10.

McDonnell S, Addou R, Buie C, Wallace R, Hinkle C . Defect-dominated doping and contact resistance in MoS2. ACS Nano. 2014; 8(3):2880-8. DOI: 10.1021/nn500044q. View

11.

Fan X, An Y, Guo W . Ferromagnetism in Transitional Metal-Doped MoS2 Monolayer. Nanoscale Res Lett. 2016; 11(1):154. PMC: 4801828. DOI: 10.1186/s11671-016-1376-y. View

12.

Wang Q, Kalantar-Zadeh K, Kis A, Coleman J, Strano M . Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol. 2012; 7(11):699-712. DOI: 10.1038/nnano.2012.193. View

13.

Ahmed S, Yi J . Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors. Nanomicro Lett. 2018; 9(4):50. PMC: 6199053. DOI: 10.1007/s40820-017-0152-6. View

14.

Xiang Z, Zhang Z, Xu X, Zhang Q, Wang Q, Yuan C . Room-temperature ferromagnetism in Co doped MoS2 sheets. Phys Chem Chem Phys. 2015; 17(24):15822-8. DOI: 10.1039/c5cp01509j. View

15.

Zhao H, Mao X, Zhou D, Feng S, Shi X, Ma Y . Bandgap modulation of MoS monolayer by thermal annealing and quick cooling. Nanoscale. 2016; 8(45):18995-19003. DOI: 10.1039/c6nr05638e. View

16.

Perkgoz N, Bay M . Investigation of Single-Wall MoS Monolayer Flakes Grown by Chemical Vapor Deposition. Nanomicro Lett. 2018; 8(1):70-79. PMC: 6223922. DOI: 10.1007/s40820-015-0064-2. View

17.

Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M . Photoluminescence from chemically exfoliated MoS2. Nano Lett. 2011; 11(12):5111-6. DOI: 10.1021/nl201874w. View

18.

Wang Y, Liu D, Zhang H, Wang J, Du R, Li T . Methylation-Induced Reversible Metallic-Semiconducting Transition of Single-Walled Carbon Nanotube Arrays for High-Performance Field-Effect Transistors. Nano Lett. 2019; 20(1):496-501. DOI: 10.1021/acs.nanolett.9b04219. View

19.

Cai L, He J, Liu Q, Yao T, Chen L, Yan W . Vacancy-induced ferromagnetism of MoS2 nanosheets. J Am Chem Soc. 2015; 137(7):2622-7. DOI: 10.1021/ja5120908. View

20.

Mao N, Chen Y, Liu D, Zhang J, Xie L . Solvatochromic effect on the photoluminescence of MoS₂ monolayers. Small. 2013; 9(8):1312-5. DOI: 10.1002/smll.201202982. View