Electronics and Optoelectronics of Two-dimensional Transition Metal Dichalcogenides

Overview

Journal Nat Nanotechnol

Specialty Biotechnology

Date 2012 Nov 8

PMID 23132225

Citations 1340

Authors

Qing Hua Wang

Kourosh Kalantar-Zadeh

Andras Kis

Jonathan N Coleman

Michael S Strano

Affiliations

Soon will be listed here.

Abstract

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

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References

Lu W, Lieber C . Nanoelectronics from the bottom up. Nat Mater. 2007; 6(11):841-50. DOI: 10.1038/nmat2028. View

Yoon Y, Ganapathi K, Salahuddin S . How good can monolayer MoS₂ transistors be?. Nano Lett. 2011; 11(9):3768-73. DOI: 10.1021/nl2018178. View

Li H, Yin Z, He Q, Li H, Huang X, Lu G . Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small. 2011; 8(1):63-7. DOI: 10.1002/smll.201101016. View

Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A . Single-layer MoS2 transistors. Nat Nanotechnol. 2011; 6(3):147-50. DOI: 10.1038/nnano.2010.279. View

Polman A, Atwater H . Photonic design principles for ultrahigh-efficiency photovoltaics. Nat Mater. 2012; 11(3):174-7. DOI: 10.1038/nmat3263. View

Lin M, Ling C, Zhang Y, Yoon H, Cheng M, Agapito L . Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors. Nanotechnology. 2011; 22(26):265201. DOI: 10.1088/0957-4484/22/26/265201. View

Lin Y, Valdes-Garcia A, Han S, Farmer D, Meric I, Sun Y . Wafer-scale graphene integrated circuit. Science. 2011; 332(6035):1294-7. DOI: 10.1126/science.1204428. View

Hwang E, Adam S, Sarma S . Carrier transport in two-dimensional graphene layers. Phys Rev Lett. 2007; 98(18):186806. DOI: 10.1103/PhysRevLett.98.186806. View

Geim A . Graphene: status and prospects. Science. 2009; 324(5934):1530-4. DOI: 10.1126/science.1158877. View

10.

Zhou K, Mao N, Wang H, Peng Y, Zhang H . A mixed-solvent strategy for efficient exfoliation of inorganic graphene analogues. Angew Chem Int Ed Engl. 2011; 50(46):10839-42. DOI: 10.1002/anie.201105364. View

11.

Castellanos-Gomez A, Barkelid M, Goossens A, Calado V, van der Zant H, Steele G . Laser-thinning of MoS₂: on demand generation of a single-layer semiconductor. Nano Lett. 2012; 12(6):3187-92. DOI: 10.1021/nl301164v. View

12.

Wu Y, Jenkins K, Valdes-Garcia A, Farmer D, Zhu Y, Bol A . State-of-the-art graphene high-frequency electronics. Nano Lett. 2012; 12(6):3062-7. DOI: 10.1021/nl300904k. View

13.

Gokus T, Nair R, Bonetti A, Bohmler M, Lombardo A, Novoselov K . Making graphene luminescent by oxygen plasma treatment. ACS Nano. 2009; 3(12):3963-8. DOI: 10.1021/nn9012753. View

14.

Late D, Liu B, Matte H, Dravid V, Rao C . Hysteresis in single-layer MoS2 field effect transistors. ACS Nano. 2012; 6(6):5635-41. DOI: 10.1021/nn301572c. View

15.

Jena D, Konar A . Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. Phys Rev Lett. 2007; 98(13):136805. DOI: 10.1103/PhysRevLett.98.136805. View

16.

Pu J, Yomogida Y, Liu K, Li L, Iwasa Y, Takenobu T . Highly flexible MoS2 thin-film transistors with ion gel dielectrics. Nano Lett. 2012; 12(8):4013-7. DOI: 10.1021/nl301335q. View

17.

Cunningham G, Lotya M, Cucinotta C, Sanvito S, Bergin S, Menzel R . Solvent exfoliation of transition metal dichalcogenides: dispersibility of exfoliated nanosheets varies only weakly between compounds. ACS Nano. 2012; 6(4):3468-80. DOI: 10.1021/nn300503e. View

18.

Balog R, Jorgensen B, Nilsson L, Andersen M, Rienks E, Bianchi M . Bandgap opening in graphene induced by patterned hydrogen adsorption. Nat Mater. 2010; 9(4):315-9. DOI: 10.1038/nmat2710. View

19.

Cao T, Wang G, Han W, Ye H, Zhu C, Shi J . Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat Commun. 2012; 3:887. PMC: 3621397. DOI: 10.1038/ncomms1882. View

20.

Coehoorn , HAAS , de Groot RA . Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps. Phys Rev B Condens Matter. 1987; 35(12):6203-6206. DOI: 10.1103/physrevb.35.6203. View