Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

Overview

Journal Nanomaterials (Basel)

Date 2022 Feb 26

PMID 35214932

Authors

Youngmin Lee

So Hyun Lee

Hyo Seok Son

Sejoon Lee

Affiliations

Soon will be listed here.

Abstract

The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nanowire that was fabricated by isotropic wet etching and subsequent oxidation of the e-beam-lithographically patterned [110] Si nanowire. The strong subband modulation in the volumetrically undulated [110] Si nanowire could create both the large quantum level spacings and the high tunnel barriers in the Si MQD MTJ system. Such a device scheme can not only decrease the cotunneling effect, but also reduce the effective electron temperature. These eventually led to the energetic stability for both the Coulomb blockade and the negative differential conductance characteristics at room temperature. The results suggest that the present device scheme (i.e., [110] Si MQD MTJ) holds great promise for the room-temperature demonstration of the high-performance Si SETs.

Citing Articles

Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model.

Lee Y, Jun H, Park S, Kim D, Lee S Nanomaterials (Basel). 2023; 13(11).

PMID: 37299712 PMC: 10254776. DOI: 10.3390/nano13111809.

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