Black Phosphorus-based Van Der Waals Heterostructures for Mid-infrared Light-emission Applications

Overview

Journal Light Sci Appl

Publisher Springer Nature

Date 2020 Jul 9

PMID 32637081

Citations 17

Authors

Xinrong Zong

Huamin Hu

Gang Ouyang

Jingwei Wang

Run Shi

Le Zhang

Qingsheng Zeng

Chao Zhu

Shouheng Chen

Chun Cheng

Bing Wang

Han Zhang

Zheng Liu

Wei Huang

Taihong Wang

Lin Wang

Xiaolong Chen

Affiliations

Soon will be listed here.

Abstract

Mid-infrared (MIR) light-emitting devices play a key role in optical communications, thermal imaging, and material analysis applications. Two-dimensional (2D) materials offer a promising direction for next-generation MIR devices owing to their exotic optical properties, as well as the ultimate thickness limit. More importantly, van der Waals heterostructures-combining the best of various 2D materials at an artificial atomic level-provide many new possibilities for constructing MIR light-emitting devices of large tuneability and high integration. Here, we introduce a simple but novel van der Waals heterostructure for MIR light-emission applications built from thin-film BP and transition metal dichalcogenides (TMDCs), in which BP acts as an MIR light-emission layer. For BP-WSe heterostructures, an enhancement of ~200% in the photoluminescence intensities in the MIR region is observed, demonstrating highly efficient energy transfer in this heterostructure with type-I band alignment. For BP-MoS heterostructures, a room temperature MIR light-emitting diode (LED) is enabled through the formation of a vertical PN heterojunction at the interface. Our work reveals that the BP-TMDC heterostructure with efficient light emission in the MIR range, either optically or electrically activated, provides a promising platform for infrared light property studies and applications.

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