Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures

Overview

Journal Nanoscale Res Lett

Publisher Springer

Specialty Biotechnology

Date 2020 Jan 1

PMID 31889237

Citations 3

Authors

H Aruni Fonseka

Philippe Caroff

Yanan Guo

Ana M Sanchez

Hark Hoe Tan

Chennupati Jagadish

Affiliations

Soon will be listed here.

Abstract

In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possible novel radial heterostructures grown on these vertical [100] oriented nanowire facets are presented, demonstrating their potential in future applications.

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