H Aruni Fonseka
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Explore the profile of H Aruni Fonseka including associated specialties, affiliations and a list of published articles.
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Articles
23
Citations
71
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Recent Articles
1.
Patel N, Fonseka H, Zhang Y, Church S, Al-Abri R, Sanchez A, et al.
ACS Appl Mater Interfaces
. 2023 Feb;
15(8):10958-10964.
PMID: 36779871
Bottom-up grown nanostructures often suffer from significant dimensional inhomogeneity, and for quantum confined heterostructures, this can lead to a corresponding large variation in electronic properties. A high-throughput characterization methodology is...
2.
Perla P, Fonseka H, Zellekens P, Deacon R, Han Y, Kolzer J, et al.
Nanoscale Adv
. 2022 Sep;
3(5):1413-1421.
PMID: 36132855
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as...
3.
Chen L, Adeyemo S, Fonseka H, Liu H, Kar S, Yang H, et al.
Nano Lett
. 2022 Apr;
22(8):3433-3439.
PMID: 35420433
The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but...
4.
Zhang Y, Fonseka H, Yang H, Yu X, Jurczak P, Huo S, et al.
Nanoscale Horiz
. 2022 Feb;
7(3):311-318.
PMID: 35119067
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the...
5.
Boras G, Yu X, Fonseka H, Davis G, Velichko A, Gott J, et al.
J Phys Chem C Nanomater Interfaces
. 2021 Jul;
125(26):14338-14347.
PMID: 34276869
Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison...
6.
Zhang Y, Velichko A, Fonseka H, Parkinson P, Gott J, Davis G, et al.
Nano Lett
. 2021 Jun;
21(13):5722-5729.
PMID: 34181433
Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using...
7.
Cui F, Zhang Y, Fonseka H, Promdet P, Channa A, Wang M, et al.
ACS Appl Mater Interfaces
. 2021 Jun;
13(26):30950-30958.
PMID: 34160197
Narrow-band-gap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer...
8.
Zeng H, Yu X, Fonseka H, Boras G, Jurczak P, Wang T, et al.
Nanotechnology
. 2020 Sep;
31(47):475708.
PMID: 32885789
One of the nanowire (NW) characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs NWs. We first...
9.
Tedeschi D, Fonseka H, Blundo E, Del Aguila A, Guo Y, Tan H, et al.
ACS Nano
. 2020 Sep;
14(9):11613-11622.
PMID: 32865391
The formation of wurtzite (WZ) phase in III-V nanowires (NWs) such as GaAs and InP is a complication hindering the growth of pure-phase NWs, but it can also be exploited...
10.
Boras G, Yu X, Fonseka H, Zhang D, Zeng H, Sanchez A, et al.
Nanoscale
. 2020 Jul;
12(29):15711-15720.
PMID: 32672269
Morphology, crystal defects and crystal phase can significantly affect the elemental distribution of ternary nanowires (NWs). Here, we report the synergic impact of the structure and crystal phase on the...