Approach to High Quality GaN Lateral Nanowires and Planar Cavities Fabricated by Focused Ion Beam and Metal-organic Vapor Phase Epitaxy

Overview

Journal Sci Rep

Specialty Science

Date 2018 May 10

PMID 29740066

Citations 2

Authors

Galia Pozina

Azat R Gubaydullin

Maxim I Mitrofanov

Mikhail A Kaliteevski

Iaroslav V Levitskii

Gleb V Voznyuk

Evgeniy E Tatarinov

Vadim P Evtikhiev

Sergey N Rodin

Vasily N Kaliteevskiy

Leonid S Chechurin

Affiliations

Soon will be listed here.

Abstract

We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.

Citing Articles

A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN.

Jiang S, Ortalan V Nanomaterials (Basel). 2023; 13(21).

PMID: 37947742 PMC: 10647709. DOI: 10.3390/nano13212898.

Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires.

Pozina G, Hemmingsson C, Abrikossova N, Girshova E, Lahderanta E, Kaliteevski M Nanomaterials (Basel). 2023; 13(8).

PMID: 37111006 PMC: 10145853. DOI: 10.3390/nano13081421.

References

Li Y, Xiang J, Qian F, Gradecak S, Wu Y, Yan H . Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. Nano Lett. 2006; 6(7):1468-73. DOI: 10.1021/nl060849z. View

Calarco R, Marso M, Richter T, Aykanat A, Meijers R, V D Hart A . Size-dependent photoconductivity in MBE-grown GaN-nanowires. Nano Lett. 2005; 5(5):981-4. DOI: 10.1021/nl0500306. View

Mohammad S . Analysis of the vapor-liquid-solid mechanism for nanowire growth and a model for this mechanism. Nano Lett. 2008; 8(5):1532-8. DOI: 10.1021/nl072974w. View

Hersee S, Sun X, Wang X . The controlled growth of GaN nanowires. Nano Lett. 2006; 6(8):1808-11. DOI: 10.1021/nl060553t. View

Amano H . Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture). Angew Chem Int Ed Engl. 2015; 54(27):7764-9. DOI: 10.1002/anie.201501651. View

Li M, Bhiladvala R, Morrow T, Sioss J, Lew K, Redwing J . Bottom-up assembly of large-area nanowire resonator arrays. Nat Nanotechnol. 2008; 3(2):88-92. PMC: 2656674. DOI: 10.1038/nnano.2008.26. View

Larsen T, Petersson K, Kuemmeth F, Jespersen T, Krogstrup P, Nygard J . Semiconductor-Nanowire-Based Superconducting Qubit. Phys Rev Lett. 2015; 115(12):127001. DOI: 10.1103/PhysRevLett.115.127001. View

Wen C, Reuter M, Tersoff J, Stach E, Ross F . Structure, growth kinetics, and ledge flow during vapor-solid-solid growth of copper-catalyzed silicon nanowires. Nano Lett. 2010; 10(2):514-9. DOI: 10.1021/nl903362y. View

Lin Y, Yeh T, Dapkus P . Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition. Nanotechnology. 2012; 23(46):465601. DOI: 10.1088/0957-4484/23/46/465601. View

10.

Koester R, Hwang J, Durand C, Le Si Dang D, Eymery J . Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy. Nanotechnology. 2009; 21(1):015602. DOI: 10.1088/0957-4484/21/1/015602. View

11.

Dai X, Messanvi A, Zhang H, Durand C, Eymery J, Bougerol C . Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires. Nano Lett. 2015; 15(10):6958-64. DOI: 10.1021/acs.nanolett.5b02900. View

12.

Pozina G, Kaliteevski M, Nikitina E, Denisov D, Polyakov N, Pirogov E . Super-radiant mode in InAs-monolayer-based Bragg structures. Sci Rep. 2015; 5:14911. PMC: 4601070. DOI: 10.1038/srep14911. View

13.

Nadj-Perge S, Frolov S, Bakkers E, Kouwenhoven L . Spin-orbit qubit in a semiconductor nanowire. Nature. 2010; 468(7327):1084-7. DOI: 10.1038/nature09682. View

14.

Dasgupta N, Sun J, Liu C, Brittman S, Andrews S, Lim J . 25th anniversary article: semiconductor nanowires--synthesis, characterization, and applications. Adv Mater. 2014; 26(14):2137-84. DOI: 10.1002/adma.201305929. View

15.

Forsberg M, Serban A, Poenaru I, Hsiao C, Junaid M, Birch J . Stacking fault related luminescence in GaN nanorods. Nanotechnology. 2015; 26(35):355203. DOI: 10.1088/0957-4484/26/35/355203. View

16.

Versteegh M, Reimer M, Jons K, Dalacu D, Poole P, Gulinatti A . Observation of strongly entangled photon pairs from a nanowire quantum dot. Nat Commun. 2014; 5:5298. PMC: 4220459. DOI: 10.1038/ncomms6298. View

17.

Forsberg M, Serban E, Hsiao C, Junaid M, Birch J, Pozina G . Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods. Sci Rep. 2017; 7(1):1170. PMC: 5430933. DOI: 10.1038/s41598-017-01052-4. View

18.

Li C, Wright J, Liu S, Lu P, Figiel J, Leung B . Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers. Nano Lett. 2017; 17(2):1049-1055. DOI: 10.1021/acs.nanolett.6b04483. View