Room Temperature Magneto-optic Effect in Silicon Light-emitting Diodes

Overview

Journal Nat Commun

Specialty Biology

Date 2018 Jan 28

PMID 29374170

Authors

F Chiodi

S L Bayliss

L Barast

D Debarre

H Bouchiat

R H Friend

A D Chepelianskii

Affiliations

Soon will be listed here.

Abstract

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, e.g. on the electro-luminescence of molecular semiconductors. Although silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging: silicon's indirect band-gap causes an inefficient emission and it is difficult to separate spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges and measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry, thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field, showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.

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