Silicon Spintronics

Overview

Journal Nat Mater

Date 2012 Apr 24

PMID 22522640

Citations 39

Authors

Ron Jansen

Affiliations

Soon will be listed here.

Abstract

Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

Citing Articles

Spin-Hall conductivity and optical characteristics of noncentrosymmetric quantum spin Hall insulators: the case of PbBiI.

Mortezaei Nobahari M, Autieri C Sci Rep. 2024; 14(1):27041.

PMID: 39511322 PMC: 11544231. DOI: 10.1038/s41598-024-77403-9.

Prediction of Two-Dimensional Janus Transition-Metal Chalcogenides: Robust Ferromagnetic Semiconductor with High Curie Temperature.

Wang Z, Qureshi A, Duan Y, Liu Y, Wang Y, Zhu J Molecules. 2024; 29(16).

PMID: 39202993 PMC: 11357067. DOI: 10.3390/molecules29163915.

Chiral perovskites deliver spin control to a conventional semiconductor.

Nature. 2024; .

PMID: 38982251 DOI: 10.1038/d41586-024-02263-2.

Room-temperature spin injection across a chiral perovskite/III-V interface.

Hautzinger M, Pan X, Hayden S, Ye J, Jiang Q, Wilson M Nature. 2024; 631(8020):307-312.

PMID: 38898280 DOI: 10.1038/s41586-024-07560-4.

Spin-Resolved Magneto-Tunneling and Giant Anisotropic -Factor in Broken Gap InAs-GaSb Core-Shell Nanowires.

Clerico V, Wojcik P, Vezzosi A, Rocci M, Demontis V, Zannier V Nano Lett. 2024; 24(3):790-796.

PMID: 38189790 PMC: 10811674. DOI: 10.1021/acs.nanolett.3c02559.

References

Huang B, Monsma D, Appelbaum I . Coherent spin transport through a 350 micron thick silicon wafer. Phys Rev Lett. 2007; 99(17):177209. DOI: 10.1103/PhysRevLett.99.177209. View

Min B, Motohashi K, Lodder C, Jansen R . Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. Nat Mater. 2006; 5(10):817-22. DOI: 10.1038/nmat1736. View

Li C, van t Erve O, Jonker B . Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts. Nat Commun. 2011; 2:245. DOI: 10.1038/ncomms1256. View

Appelbaum I, Huang B, Monsma D . Electronic measurement and control of spin transport in silicon. Nature. 2007; 447(7142):295-8. DOI: 10.1038/nature05803. View

Li P, Dery H . Spin-orbit symmetries of conduction electrons in silicon. Phys Rev Lett. 2011; 107(10):107203. DOI: 10.1103/PhysRevLett.107.107203. View

Appelbaum I . Introduction to spin-polarized ballistic hot electron injection and detection in silicon. Philos Trans A Math Phys Eng Sci. 2011; 369(1951):3554-74. DOI: 10.1098/rsta.2011.0137. View

Chappert C, Fert A, Van Dau F . The emergence of spin electronics in data storage. Nat Mater. 2007; 6(11):813-23. DOI: 10.1038/nmat2024. View

Dash S, Sharma S, Patel R, de Jong M, Jansen R . Electrical creation of spin polarization in silicon at room temperature. Nature. 2009; 462(7272):491-4. DOI: 10.1038/nature08570. View

Restrepo O, Windl W . Full first-principles theory of spin relaxation in group-IV materials. Phys Rev Lett. 2012; 109(16):166604. DOI: 10.1103/PhysRevLett.109.166604. View

10.

Hilton D, Tang C . Optical orientation and femtosecond relaxation of spin-polarized holes in GaAs. Phys Rev Lett. 2002; 89(14):146601. DOI: 10.1103/PhysRevLett.89.146601. View

11.

Ando K, Saitoh E . Observation of the inverse spin Hall effect in silicon. Nat Commun. 2012; 3:629. PMC: 3272575. DOI: 10.1038/ncomms1640. View

12.

Jansen R, Min B . Detection of a spin accumulation in nondegenerate semiconductors. Phys Rev Lett. 2008; 99(24):246604. DOI: 10.1103/PhysRevLett.99.246604. View

13.

Li P, Dery H . Theory of spin-dependent phonon-assisted optical transitions in silicon. Phys Rev Lett. 2010; 105(3):037204. DOI: 10.1103/PhysRevLett.105.037204. View

14.

Bauer G, Saitoh E, Wees B . Spin caloritronics. Nat Mater. 2012; 11(5):391-9. DOI: 10.1038/nmat3301. View

15.

Cheng J, Wu M, Fabian J . Theory of the spin relaxation of conduction electrons in silicon. Phys Rev Lett. 2010; 104(1):016601. DOI: 10.1103/PhysRevLett.104.016601. View

16.

Jiang X, Wang R, van Dijken S, Shelby R, Macfarlane R, Solomon G . Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source. Phys Rev Lett. 2003; 90(25 Pt 1):256603. DOI: 10.1103/PhysRevLett.90.256603. View

17.

Merchant C, Markovic N . Electrically tunable spin polarization in a carbon nanotube spin diode. Phys Rev Lett. 2008; 100(15):156601. DOI: 10.1103/PhysRevLett.100.156601. View

18.

Jansen R, Min B, Dash S . Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field. Nat Mater. 2009; 9(2):133-8. DOI: 10.1038/nmat2605. View

19.

Alvarado , RENAUD . Observation of spin-polarized-electron tunneling from a ferromagnet into GaAs. Phys Rev Lett. 1992; 68(9):1387-1390. DOI: 10.1103/PhysRevLett.68.1387. View

20.

Tran M, Jaffres H, Deranlot C, George J, Fert A, Miard A . Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor. Phys Rev Lett. 2009; 102(3):036601. DOI: 10.1103/PhysRevLett.102.036601. View