Colossal Permittivity Behavior and Its Origin in Rutile (MgTa)TiO

This work investigates the synthesis, chemical composition, defect structures and associated dielectric properties of (Mg, Ta) co-doped rutile TiO polycrystalline ceramics with nominal compositions of (MgTa) Ti O. Colossal permittivity (>7000) with a low dielectric loss (e.g. 0.002 at 1 kHz) across a broad frequency/temperature range can be achieved at x = 0.5% after careful optimization of process conditions. Both experimental and theoretical evidence indicates such a colossal permittivity and low dielectric loss intrinsically originate from the intragrain polarization that links to the electron-pinned [Formula: see text] defect clusters with a specific configuration, different from the defect cluster form previously reported in tri-/pent-valent ion co-doped rutile TiO. This work extends the research on colossal permittivity and defect formation to bi-/penta-valent ion co-doped rutile TiO and elucidates a likely defect cluster model for this system. We therefore believe these results will benefit further development of colossal permittivity materials and advance the understanding of defect chemistry in solids.