Carrier Dynamics of Mn-induced States in GaN Thin Films

Overview

Journal Sci Rep

Specialty Science

Date 2017 Jul 21

PMID 28724899

Citations 1

Authors

Yu-Ting Chen

Chi-Yuan Yang

Po-Cheng Chen

Jinn-Kong Sheu

Kung-Hsuan Lin

Affiliations

Soon will be listed here.

Abstract

GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved. We conducted transient optical measurements to study the carrier dynamics of Mn-doped GaN. The lifetime of carriers in the Mn-related intermediate bands (at 1.5 eV above the valence band edge) is around 1.7 ns. The carrier relaxation within the Mn-induced bandtail states was on the order of a few hundred picoseconds. The relaxation times of different states are important parameters for optimization of conversion efficiency for intermediate-band solar cells.

Citing Articles

Photo-Excited Carrier Dynamics in Ammonothermal Mn-Compensated GaN Semiconductor.

Scajev P, Prystawko P, Kucharski R, Kasalynas I Materials (Basel). 2024; 17(23).

PMID: 39685431 PMC: 11643307. DOI: 10.3390/ma17235995.

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