Intermediate-band Dynamics of Quantum Dots Solar Cell in Concentrator Photovoltaic Modules
Authors
Affiliations
We report for the first time a successful fabrication and operation of an InAs/GaAs quantum dot based intermediate band solar cell concentrator photovoltaic (QD-IBSC-CPV) module to the IEC62108 standard with recorded power conversion efficiency of 15.3%. Combining the measured experimental results at Underwriters Laboratory (UL®) licensed testing laboratory with theoretical simulations, we confirmed that the operational characteristics of the QD-IBSC-CPV module are a consequence of the carrier dynamics via the intermediate-band at room temperature.
Hosokawa H, Tamaki R, Sawada T, Okonogi A, Sato H, Ogomi Y Nat Commun. 2019; 10(1):43.
PMID: 30626874 PMC: 6327045. DOI: 10.1038/s41467-018-07655-3.
Zhu L, Akiyama H, Kanemitsu Y Sci Rep. 2018; 8(1):11704.
PMID: 30076353 PMC: 6076326. DOI: 10.1038/s41598-018-30208-z.
Nitrogen-related intermediate band in P-rich GaNPAs alloys.
Zelazna K, Gladysiewicz M, Polak M, Almosni S, Letoublon A, Cornet C Sci Rep. 2017; 7(1):15703.
PMID: 29147023 PMC: 5691189. DOI: 10.1038/s41598-017-15933-1.
Souaf M, Baira M, Nasr O, Alouane M, Maaref H, Sfaxi L Materials (Basel). 2017; 8(8):4699-4709.
PMID: 28793465 PMC: 5455476. DOI: 10.3390/ma8084699.
Carrier dynamics of Mn-induced states in GaN thin films.
Chen Y, Yang C, Chen P, Sheu J, Lin K Sci Rep. 2017; 7(1):5788.
PMID: 28724899 PMC: 5517569. DOI: 10.1038/s41598-017-06316-7.