Enhancement of Carrier Transport Characteristic in the SbSeTe Topological Insulators by N Adsorption

Overview

Journal Sci Rep

Specialty Science

Date 2017 Jul 13

PMID 28698640

Citations 3

Authors

Shiu-Ming Huang

Shih-Jhe Huang

Ching Hsu

Paritosh V Wadekar

You-Jhih Yan

Shih-Hsun Yu

Mitch Chou

Affiliations

Soon will be listed here.

Abstract

The carrier transport characteristics of SbSeTe topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the SbSeTe crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N molecular.

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