Magnetism in the P-type Monolayer II-VI Semiconductors SrS and SrSe

Overview

Journal Sci Rep

Specialty Science

Date 2017 Apr 6

PMID 28378761

Citations 3

Authors

Heng-Fu Lin

Woon-Ming Lau

Jijun Zhao

Affiliations

Soon will be listed here.

Abstract

Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors.

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References

Cao T, Li Z, Louie S . Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe. Phys Rev Lett. 2015; 114(23):236602. DOI: 10.1103/PhysRevLett.114.236602. View

Blochl . Projector augmented-wave method. Phys Rev B Condens Matter. 1994; 50(24):17953-17979. DOI: 10.1103/physrevb.50.17953. View

Efetov D, Kim P . Controlling electron-phonon interactions in graphene at ultrahigh carrier densities. Phys Rev Lett. 2011; 105(25):256805. DOI: 10.1103/PhysRevLett.105.256805. View

Wu Y, Lin Y, Bol A, Jenkins K, Xia F, Farmer D . High-frequency, scaled graphene transistors on diamond-like carbon. Nature. 2011; 472(7341):74-8. DOI: 10.1038/nature09979. View

Perdew , Burke , Ernzerhof . Generalized Gradient Approximation Made Simple. Phys Rev Lett. 1996; 77(18):3865-3868. DOI: 10.1103/PhysRevLett.77.3865. View

Zhou Y, Yang P, Zu H, Gao F, Zu X . Electronic structures and magnetic properties of MoS2 nanostructures: atomic defects, nanoholes, nanodots and antidots. Phys Chem Chem Phys. 2013; 15(25):10385-94. DOI: 10.1039/c3cp50381j. View

Zhang X, Zhao X, Wu D, Jing Y, Zhou Z . MnPSe Monolayer: A Promising 2D Visible-Light Photohydrolytic Catalyst with High Carrier Mobility. Adv Sci (Weinh). 2016; 3(10):1600062. PMC: 5096250. DOI: 10.1002/advs.201600062. View

Zhang Y, Oka T, Suzuki R, Ye J, Iwasa Y . Electrically switchable chiral light-emitting transistor. Science. 2014; 344(6185):725-8. DOI: 10.1126/science.1251329. View

Park Y, Hanbicki A, Erwin S, Hellberg C, Sullivan J, Mattson J . A group-IV ferromagnetic semiconductor: MnxGe1-x. Science. 2002; 295(5555):651-4. DOI: 10.1126/science.1066348. View

10.

Liao L, Lin Y, Bao M, Cheng R, Bai J, Liu Y . High-speed graphene transistors with a self-aligned nanowire gate. Nature. 2010; 467(7313):305-8. PMC: 2965636. DOI: 10.1038/nature09405. View

11.

Schwierz F . Graphene transistors. Nat Nanotechnol. 2010; 5(7):487-96. DOI: 10.1038/nnano.2010.89. View

12.

Mak K, He K, Lee C, Lee G, Hone J, Heinz T . Tightly bound trions in monolayer MoS2. Nat Mater. 2012; 12(3):207-11. DOI: 10.1038/nmat3505. View

13.

Venkatesan M, Fitzgerald C, Coey J . Thin films: unexpected magnetism in a dielectric oxide. Nature. 2004; 430(7000):630. DOI: 10.1038/430630a. View

14.

Castro E, Peres N, Stauber T, Silva N . Low-density ferromagnetism in biased bilayer graphene. Phys Rev Lett. 2008; 100(18):186803. DOI: 10.1103/PhysRevLett.100.186803. View

15.

Feng B, Ding Z, Meng S, Yao Y, He X, Cheng P . Evidence of silicene in honeycomb structures of silicon on Ag(111). Nano Lett. 2012; 12(7):3507-11. DOI: 10.1021/nl301047g. View

16.

Cahangirov S, Topsakal M, Akturk E, Sahin H, Ciraci S . Two- and one-dimensional honeycomb structures of silicon and germanium. Phys Rev Lett. 2009; 102(23):236804. DOI: 10.1103/PhysRevLett.102.236804. View

17.

Li L, Yu Y, Ye G, Ge Q, Ou X, Wu H . Black phosphorus field-effect transistors. Nat Nanotechnol. 2014; 9(5):372-7. DOI: 10.1038/nnano.2014.35. View

18.

Wang Q, Kalantar-Zadeh K, Kis A, Coleman J, Strano M . Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol. 2012; 7(11):699-712. DOI: 10.1038/nnano.2012.193. View

19.

Mak K, Lee C, Hone J, Shan J, Heinz T . Atomically thin MoS₂: a new direct-gap semiconductor. Phys Rev Lett. 2011; 105(13):136805. DOI: 10.1103/PhysRevLett.105.136805. View

20.

Gao J, Zhang J, Liu H, Zhang Q, Zhao J . Structures, mobilities, electronic and magnetic properties of point defects in silicene. Nanoscale. 2013; 5(20):9785-92. DOI: 10.1039/c3nr02826g. View