Memristors with Diffusive Dynamics As Synaptic Emulators for Neuromorphic Computing

Overview

Journal Nat Mater

Date 2016 Sep 27

PMID 27669052

Citations 239

Authors

Zhongrui Wang

Saumil Joshi

Sergey E Savelev

Hao Jiang

Rivu Midya

Peng Lin

Miao Hu

Ning Ge

John Paul Strachan

Zhiyong Li

Qing Wu

Mark Barnell

Geng-Lin Li

Huolin L Xin

R Stanley Williams

Qiangfei Xia

J Joshua Yang

Affiliations

Soon will be listed here.

Abstract

The accumulation and extrusion of Ca in the pre- and postsynaptic compartments play a critical role in initiating plastic changes in biological synapses. To emulate this fundamental process in electronic devices, we developed diffusive Ag-in-oxide memristors with a temporal response during and after stimulation similar to that of the synaptic Ca dynamics. In situ high-resolution transmission electron microscopy and nanoparticle dynamics simulations both demonstrate that Ag atoms disperse under electrical bias and regroup spontaneously under zero bias because of interfacial energy minimization, closely resembling synaptic influx and extrusion of Ca, respectively. The diffusive memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses, representing an advance in hardware implementation of neuromorphic functionalities.

Citing Articles

Integrated artificial neurons from metal halide perovskites.

de Boer J, Ehrler B Mater Horiz. 2025; .

PMID: 39832126 PMC: 11745301. DOI: 10.1039/d4mh01729c.

Memristive Ion Dynamics to Enable Biorealistic Computing.

Zhao R, Kim S, Xu Y, Zhao J, Wang T, Midya R Chem Rev. 2024; 125(2):745-785.

PMID: 39729346 PMC: 11759055. DOI: 10.1021/acs.chemrev.4c00587.

Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model.

Bou A, Gonzales C, Boix P, Vaynzof Y, Guerrero A, Bisquert J J Phys Chem Lett. 2024; 16(1):69-76.

PMID: 39699063 PMC: 11726628. DOI: 10.1021/acs.jpclett.4c03132.

Simultaneous achieving negative photoconductivity response and volatile resistive switching in CsCoCl single crystals towards artificial optoelectronic synapse.

Jiang H, Ji H, Ma Z, Yang D, Ma J, Zhang M Light Sci Appl. 2024; 13(1):316.

PMID: 39622801 PMC: 11612145. DOI: 10.1038/s41377-024-01642-8.

Taming Prolonged Ionic Drift-Diffusion Dynamics for Brain-Inspired Computation.

Inoue H, Tamura H, Kitoh A, Chen X, Byambadorj Z, Yajima T Adv Mater. 2024; 37(3):e2407326.

PMID: 39600216 PMC: 11756045. DOI: 10.1002/adma.202407326.

References

Malenka R, Bear M . LTP and LTD: an embarrassment of riches. Neuron. 2004; 44(1):5-21. DOI: 10.1016/j.neuron.2004.09.012. View

Burgoyne R . Neuronal calcium sensor proteins: generating diversity in neuronal Ca2+ signalling. Nat Rev Neurosci. 2007; 8(3):182-93. PMC: 1887812. DOI: 10.1038/nrn2093. View

Caporale N, Dan Y . Spike timing-dependent plasticity: a Hebbian learning rule. Annu Rev Neurosci. 2008; 31:25-46. DOI: 10.1146/annurev.neuro.31.060407.125639. View

Zucker R, Regehr W . Short-term synaptic plasticity. Annu Rev Physiol. 2002; 64:355-405. DOI: 10.1146/annurev.physiol.64.092501.114547. View

Wedig A, Luebben M, Cho D, Moors M, Skaja K, Rana V . Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems. Nat Nanotechnol. 2015; 11(1):67-74. DOI: 10.1038/nnano.2015.221. View

Hubbard W, Kerelsky A, Jasmin G, White E, Lodico J, Mecklenburg M . Nanofilament Formation and Regeneration During Cu/Al₂O₃ Resistive Memory Switching. Nano Lett. 2015; 15(6):3983-7. DOI: 10.1021/acs.nanolett.5b00901. View

Liu Q, Sun J, Lv H, Long S, Yin K, Wan N . Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv Mater. 2012; 24(14):1844-9. DOI: 10.1002/adma.201104104. View

Sun J, He L, Lo Y, Xu T, Bi H, Sun L . Liquid-like pseudoelasticity of sub-10-nm crystalline silver particles. Nat Mater. 2014; 13(11):1007-12. DOI: 10.1038/nmat4105. View

Lim H, Kim I, Kim J, Hwang C, Jeong D . Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold. Nanotechnology. 2013; 24(38):384005. DOI: 10.1088/0957-4484/24/38/384005. View

10.

Clapham D . Calcium signaling. Cell. 2007; 131(6):1047-58. DOI: 10.1016/j.cell.2007.11.028. View

11.

Tian X, Yang S, Zeng M, Wang L, Wei J, Xu Z . Bipolar electrochemical mechanism for mass transfer in nanoionic resistive memories. Adv Mater. 2014; 26(22):3649-54. DOI: 10.1002/adma.201400127. View

12.

Mulkey R, Herron C, Malenka R . An essential role for protein phosphatases in hippocampal long-term depression. Science. 1993; 261(5124):1051-5. DOI: 10.1126/science.8394601. View

13.

Yang Y, Gao P, Li L, Pan X, Tappertzhofen S, Choi S . Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun. 2014; 5:4232. DOI: 10.1038/ncomms5232. View

14.

Pershin Y, Di Ventra M . Experimental demonstration of associative memory with memristive neural networks. Neural Netw. 2010; 23(7):881-6. DOI: 10.1016/j.neunet.2010.05.001. View

15.

Indiveri G, Chicca E, Douglas R . A VLSI array of low-power spiking neurons and bistable synapses with spike-timing dependent plasticity. IEEE Trans Neural Netw. 2006; 17(1):211-21. DOI: 10.1109/TNN.2005.860850. View

16.

Hasegawa T, Terabe K, Tsuruoka T, Aono M . Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers. Adv Mater. 2011; 24(2):252-67. DOI: 10.1002/adma.201102597. View

17.

van den Hurk J, Linn E, Zhang H, Waser R, Valov I . Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches. Nanotechnology. 2014; 25(42):425202. DOI: 10.1088/0957-4484/25/42/425202. View

18.

Waser R, Aono M . Nanoionics-based resistive switching memories. Nat Mater. 2007; 6(11):833-40. DOI: 10.1038/nmat2023. View

19.

Valov I, Sapezanskaia I, Nayak A, Tsuruoka T, Bredow T, Hasegawa T . Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces. Nat Mater. 2012; 11(6):530-5. DOI: 10.1038/nmat3307. View

20.

Jo S, Chang T, Ebong I, Bhadviya B, Mazumder P, Lu W . Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 2010; 10(4):1297-301. DOI: 10.1021/nl904092h. View