Temperature Change During Non-contact Diode Laser Irradiation of Implant Surfaces

A temperature increase of more than 10°C can compromise bone vitality. Laser radiation with different wavelengths has been used for the treatment of peri-implantitis, but little is known about the effect of laser irradiation on temperature rise on the implant surface. In this study, the temperature gradient (∆T) generated by laser irradiation of implant surface using two diode lasers (810 nm and a 980 nm) with 2 W of power has been recorded by two thermocouples (one in the cervical area and one in the apical area) and studied. The 810-nm diode laser showed the following results: after 60 s of irradiation with 2 W of continuous mode the temperature gradient in the cervical area of the implant (∆Tc) was 37.2°C, while in the apical area (∆Ta) was 27.2°C. The 980-nm diode laser showed the following results: after 60 s of irradiation with 2 W continuous mode ∆Tc was 41.1°C, and ∆Ta was 30.6°C. The 810-nm diode laser with 2 W continuous mode generated a temperature increase of 10°C after only 14 s. The 980-nm diode lasers groups produced a much more rapid temperature increase. In only 12 s, the continuous wave of 980 nm reached the 10°C temperature rise. From the present in vitro study it was concluded that the irradiation of implant surfaces with diode lasers may produce a temperature increase above the critical threshold (10°C ) after only 10 s.