Zhi-Chuan Niu
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Explore the profile of Zhi-Chuan Niu including associated specialties, affiliations and a list of published articles.
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Articles
19
Citations
45
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Recent Articles
1.
Ma R, Li H, Shi C, Wang F, Lei L, Huang Y, et al.
Rev Sci Instrum
. 2023 Sep;
94(9).
PMID: 37671954
We developed a new scheme for cryogen-free cooling down to sub-3 K temperature range and ultra-low vibration level. An ultra-high-vacuum cryogen-free scanning probe microscope (SPM) system was built based on...
2.
Jiang J, Wang G, Wu D, Xu Y, Chang F, Zhou W, et al.
Opt Express
. 2022 Oct;
30(21):38208-38215.
PMID: 36258387
High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.5 µm,...
3.
Sun J, Li N, Jia Q, Zhang X, Jiang D, Wang G, et al.
Nanoscale Res Lett
. 2021 May;
16(1):98.
PMID: 34052936
The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical...
4.
Sun Y, Zou Y, Chen G, Tang J, Ni H, Li M, et al.
Opt Express
. 2018 Mar;
25(3):1778-1788.
PMID: 29519031
The inhomogeneous broadening of the bi-exciton state in quantum dots, i.e., the inhomogeneous broadening of the upper level of the cascade process, is not only a fundamental problem in quantum...
5.
Su X, Ding Y, Ma B, Zhang K, Chen Z, Li J, et al.
Nanoscale Res Lett
. 2018 Feb;
13(1):59.
PMID: 29468483
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in...
6.
Wei Y, Yu Y, Wang J, Liu L, Ni H, Niu Z, et al.
Nanoscale
. 2017 Oct;
9(41):16066-16072.
PMID: 29034398
We investigate optical second harmonic generation (SHG) from individual self-catalyzed zinc-blende (ZB) GaAs nanowires (NWs), where the polarimetry strongly depends on the NW diameter. We report a direct observation on...
7.
Yu Y, Wang J, Wei Y, Zhou Z, Ni H, Niu Z, et al.
Nanotechnology
. 2017 Jul;
28(39):395701.
PMID: 28682302
We demonstrate the utility of optical second harmonic generation (SHG) polarimetry to perform structural characterization of self-assembled zinc-blende/wurtzite III-V nanowire heterostructures. By analyzing four anisotropic SHG polarimetric patterns, we distinguish...
8.
Chen Z, Ma B, Shang X, Ni H, Wang J, Niu Z
Nanoscale Res Lett
. 2017 Jun;
12(1):378.
PMID: 28571308
A pronounced high count rate of single-photon emission at the wavelength of 1.3 μm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar...
9.
Wang J, Yu Y, Wei Y, Liu S, Li J, Zhou Z, et al.
Sci Rep
. 2017 May;
7(1):2166.
PMID: 28526826
In this paper, we investigate second harmonic generation in a single hexagonal GaAs nanowire. An excellent frequency converter based on this nanowire excited using a femtosecond laser is demonstrated to...
10.
Yu Y, Wei Y, Wang J, Li J, Shang X, Ni H, et al.
Nanoscale
. 2017 Apr;
9(17):5483-5488.
PMID: 28401237
Nanowire quantum dots (NW-QDs) can be used for future compact and efficient optoelectronic devices. Many efforts have been made to control the QD states by inserting the QDs in doped...