Zhe Chuan Feng
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Explore the profile of Zhe Chuan Feng including associated specialties, affiliations and a list of published articles.
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18
Citations
20
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Recent Articles
1.
Talwar D, Chen L, Chen K, Feng Z
Nanomaterials (Basel)
. 2025 Feb;
15(4).
PMID: 39997854
The narrow bandgap InN material, with exceptional physical properties, has recently gained considerable attention, encouraging many scientists/engineers to design infrared photodetectors, light-emitting diodes, laser diodes, solar cells, and high-power electronic...
2.
Yang Y, Liu Y, Li Y, Nafisa M, Feng Z, Wang L, et al.
Nanomaterials (Basel)
. 2025 Feb;
15(3).
PMID: 39940141
A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin buffer, GaN thick layer and AlGaN layer (13-104 nm thick), is prepared by metal-organic chemical vapor deposition and...
3.
Liu J, Xie D, Feng Z, Nafisa M, Wan L, Qiu Z, et al.
Nanomaterials (Basel)
. 2024 Dec;
14(23).
PMID: 39683345
MgZnO possesses a tunable bandgap and can be prepared at relatively low temperatures, making it suitable for developing optoelectronic devices. MgZnO (~0.1) films were grown on sapphire by metal-organic vapor...
4.
Feng Z, Tian M, Zhang X, Nafisa M, Liu Y, Yiin J, et al.
Nanomaterials (Basel)
. 2024 Nov;
14(21).
PMID: 39513849
AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of...
5.
Talwar D, Feng Z
Molecules
. 2024 Sep;
29(17).
PMID: 39275036
Quaternary (AlGa)InP alloys grown on GaAs substrates have recently gained considerable interest in photonics for improving visible light-emitting diodes, laser diodes, and photodetectors. With two degrees of freedom (x, y)...
6.
Feng Z, Liu J, Xie D, Nafisa M, Zhang C, Wan L, et al.
Materials (Basel)
. 2024 Jun;
17(12).
PMID: 38930290
GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown...
7.
Yang Y, Liu Y, Wang L, Zhang S, Lu H, Peng Y, et al.
Materials (Basel)
. 2023 Dec;
16(23).
PMID: 38068186
The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness...
8.
Li L, Wan L, Xia C, Sai Q, Talwar D, Feng Z, et al.
Materials (Basel)
. 2023 Jun;
16(12).
PMID: 37374452
The long-range crystallographic order and anisotropy in β-(AlGa)O (x = 0.0, 0.06, 0.11, 0.17, 0.26) crystals, prepared by optical floating zone method with different Al composition, is systematically studied by...
9.
Zhang S, Yang H, Wang L, Cheng H, Lu H, Yang Y, et al.
Materials (Basel)
. 2023 Mar;
16(5).
PMID: 36903040
Bulk aluminum nitride (AlN) crystals with different polarities were grown by physical vapor transport (PVT). The structural, surface, and optical properties of m-plane and c-plane AlN crystals were comparatively studied...
10.
Feng Z, Liu Y, Yiin J, Chen L, Chen K, Klein B, et al.
Materials (Basel)
. 2023 Jan;
16(1).
PMID: 36614436
GaN nanowires (NWs) grown on silicon via atmospheric pressure chemical vapor deposition were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4 × 10 cm,...