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Yongli Che

Explore the profile of Yongli Che including associated specialties, affiliations and a list of published articles. Areas
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Articles 14
Citations 26
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Recent Articles
1.
Song X, Zhang Y, Zhang H, Yu Y, Cao M, Che Y, et al.
Nanotechnology . 2021 Aug; 33(15). PMID: 34352737
No abstract available.
2.
Che Y, Zhang Y, Cao X, Zhang H, Song X, Cao M, et al.
ACS Appl Mater Interfaces . 2020 Dec; 13(1):2110. PMID: 33356133
No abstract available.
3.
Zhang Y, Song X, Wang R, Cao M, Wang H, Che Y, et al.
Nanotechnology . 2020 Dec; 32(50). PMID: 33326948
No abstract available.
4.
Yu Y, Zhang Y, Jin L, Chen Z, Li Y, Li Q, et al.
Sensors (Basel) . 2018 Dec; 18(12). PMID: 30544777
Humidity sensors allow electronic devices to convert the water content in the environment into electronical signals by utilizing material properties and transduction techniques. Three-dimensional graphene foam (3DGF) can be exploited...
5.
Che Y, Zhang Y, Cao X, Zhang H, Song X, Cao M, et al.
ACS Appl Mater Interfaces . 2017 Aug; 9(37):32001-32007. PMID: 28853277
A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The...
6.
Cao M, Yang S, Zhang Y, Song X, Che Y, Zhang H, et al.
Nanotechnology . 2017 Mar; 28(24):245202. PMID: 28319039
Graphene quantum dots (GQDs) have received much research attention, because of their useful structure and optical absorption/emission. We report the tunable amplified spontaneous emission (ASE) in GQD-doped cholesteric liquid crystal...
7.
Song X, Zhang Y, Zhang H, Yu Y, Cao M, Che Y, et al.
Nanotechnology . 2017 Feb; 28(14):145201. PMID: 28184032
A field-effect phototransistor based on a graphene and lead sulfide quantum dot (PbS QD) hybrid in which PbS QDs are embedded in a graphene matrix has been fabricated with a ...
8.
Yu Y, Zhang Y, Zhang Z, Zhang H, Song X, Cao M, et al.
J Phys Chem Lett . 2017 Jan; 8(2):445-451. PMID: 28050910
Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FETs) based on CHNHPbI perovskite/PbSe...
9.
Zhang H, Zhang Y, Song X, Yu Y, Cao M, Che Y, et al.
Nanotechnology . 2016 Sep; 27(42):425204. PMID: 27623533
Here, vertical field effect phototransistors (VFEPTs) based on lead selenide colloidal quantum dots (PbSe CQDs) for infrared photo detection were investigated, using Au/Ag nanowires as the source transparent electrode. VFEPTs...
10.
Song X, Zhang Y, Zhang H, Yu Y, Cao M, Che Y, et al.
Nanotechnology . 2016 Sep; 27(40):405201. PMID: 27578613
Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally...