Tsung-Ming Tsai
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Explore the profile of Tsung-Ming Tsai including associated specialties, affiliations and a list of published articles.
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19
Citations
65
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Recent Articles
1.
Lin C, Tan Y, Tseng S, Chen W, Kuo C, Wu C, et al.
Medicine (Baltimore)
. 2022 Sep;
101(35):e30338.
PMID: 36107585
Acupuncture manipulation with needling direction is important for the therapeutic effect based on traditional Chinese medicine theory. However, there is controversy over directional manipulation and therapeutic effect, despite some research...
2.
Liu Y, Kuo C, Chang T, Hung Y, Tan Y, Wu C, et al.
Nanoscale Res Lett
. 2022 Jul;
17(1):64.
PMID: 35802273
Meridians constitute the theoretical foundation of acupuncture in traditional Chinese medicine (TCM), and they have been described for 2000 years. Classical TCM advocates for the directionality of meridians. Finding an...
3.
Lin C, Chen P, Chen M, Wang M, Yang C, Huang H, et al.
Nanotechnology
. 2022 Mar;
33(27).
PMID: 35272278
In this study, we have investigated the improvements in the performance of an all-solid-state complementary electrochromic device (ECD) by using the proposed high pressure treatment (HPT). The Li:TaOelectrolyte layer was...
4.
Hung Y, Chen W, Chang T, Zheng H, Liu Y, Tan Y, et al.
Nanoscale Res Lett
. 2020 Jul;
15(1):146.
PMID: 32651748
Acupuncture and its meridians are important components of traditional Chinese medicine, and numerous opinions have been previously expressed regarding these meridians. This study aims to explore the phenomenon of meridians...
5.
Yang C, Chen P, Chang T, Su W, Chen S, Liu S, et al.
Nanoscale Res Lett
. 2019 Dec;
14(1):375.
PMID: 31832795
In this work, a high-density hydrogen (HDH) treatment is proposed to reduce interface traps and enhance the efficiency of the passivated emitter rear contact (PERC) device. The hydrogen gas is...
6.
Chen K, Tsai T, Cheng C, Huang S, Chang K, Liang S, et al.
Materials (Basel)
. 2017 Dec;
11(1).
PMID: 29283368
In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated...
7.
Lin C, Chen P, Chang T, Chang K, Zhang S, Tsai T, et al.
Nanoscale
. 2017 Jun;
9(25):8586-8590.
PMID: 28636031
This study proposes a method for a HfO-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as...
8.
Chen P, Chang T, Chang K, Tsai T, Pan C, Chen M, et al.
ACS Appl Mater Interfaces
. 2017 Jan;
9(3):3149-3155.
PMID: 28072511
In this study, an O inductively coupled plasma (ICP) treatment was developed in order to modify the characteristics of indium tin oxide (ITO) film for use as an insulator in...
9.
Chen H, Chen Y, Chang T, Chang K, Tsai T, Chu T, et al.
Nanoscale Res Lett
. 2016 Jun;
11(1):275.
PMID: 27251325
In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We...
10.
Chen K, Chang K, Chang T, Tsai T, Liang S, Young T, et al.
Nanoscale Res Lett
. 2016 Apr;
11(1):224.
PMID: 27117634
To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of...