Ta-Chang Tien
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Explore the profile of Ta-Chang Tien including associated specialties, affiliations and a list of published articles.
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10
Citations
53
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Recent Articles
1.
Prakash A, Maikap S, Chiu H, Tien T, Lai C
Nanoscale Res Lett
. 2014 May;
9(1):152.
PMID: 24791160
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio...
2.
Kumar P, Maikap S, Prakash A, Tien T
Nanoscale Res Lett
. 2014 Apr;
9(1):179.
PMID: 24725352
Time-dependent pH sensing phenomena of the core-shell CdSe/ZnS quantum dot (QD) sensors in EIS (electrolyte insulator semiconductor) structure have been investigated for the first time. The quantum dots are immobilized...
3.
Prakash A, Maikap S, Chiu H, Tien T, Lai C
Nanoscale Res Lett
. 2014 Mar;
9(1):125.
PMID: 24636463
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio...
4.
Prakash A, Maikap S, Chiu H, Tien T, Lai C
Nanoscale Res Lett
. 2013 Nov;
8(1):419.
PMID: 24229327
No abstract available.
5.
Rahaman S, Maikap S, Das A, Prakash A, Wu Y, Lai C, et al.
Nanoscale Res Lett
. 2012 Nov;
7(1):614.
PMID: 23130908
We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge0.5Se0.5/W, as compared with Al/Cu/Ge0.2Se0.8/W structures, including stable AC endurance (>105 cycles), larger average SET voltage (approximately 0.6 V),...
6.
Rahaman S, Maikap S, Tien T, Lee H, Chen W, Chen F, et al.
Nanoscale Res Lett
. 2012 Jun;
7(1):345.
PMID: 22734564
Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaOx/W structure with a Ti nanolayer at the Cu/TaOx interface under low voltage operation of ± 1.5 V and a range...
7.
Banerjee W, Maikap S, Lai C, Chen Y, Tien T, Lee H, et al.
Nanoscale Res Lett
. 2012 Mar;
7(1):194.
PMID: 22439604
Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 nm in...
8.
Chen C, Tien T, Ko B, Chen Y, Ting C
ACS Appl Mater Interfaces
. 2010 Apr;
1(4):741-5.
PMID: 20355997
We have used ultraviolet photoelectron spectroscopy to investigate the energy-level and band alignment near the anode for poly(3-hexylthiophene)/[6,6]-phenyl-C(61)-butyric acid methyl ester (P3HT/PCBM)-based organic solar cells. Analysis of various batches of...
9.
Tien T, Pan F, Wang L, Lee C, Tung Y, Tsai S, et al.
Nanotechnology
. 2009 Jul;
20(30):305201.
PMID: 19581691
Low-temperature (approximately 150 degrees C), atomic-layer-deposited Al(2)O(3) films on nanoporous TiO2 electrodes of dye-sensitized solar cells (DSSCs) were investigated using electron spectroscopy. The power conversion efficiency (PCE) of the DSSCs...
10.
Chen T, Hung J, Pan F, Chang L, Wu S, Tien T
J Nanosci Nanotechnol
. 2009 May;
9(5):3264-8.
PMID: 19453002
To improve electron field emission properties of anodic aluminum oxide (AAO) templated Si nanotips, IrO2 nanoparticles were deposited on the nanotips using bipolar pulse electrodeposition method. The IrO2 nanoparticles had...