Suman Datta
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Explore the profile of Suman Datta including associated specialties, affiliations and a list of published articles.
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Articles
37
Citations
421
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Recent Articles
1.
Durham D, Noor M, Aabrar K, Liu Y, Datta S, Cho K, et al.
ACS Appl Mater Interfaces
. 2024 Nov;
16(49):68562-68568.
PMID: 39589352
In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the...
2.
Zhao Z, Woo S, Aabrar K, Kirtania S, Jiang Z, Deng S, et al.
ACS Appl Mater Interfaces
. 2024 Oct;
PMID: 39374172
In this work, we propose a dual-port cell design to address the pass disturbance in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We...
3.
Stone G, Shi Y, Jerry M, Stoica V, Paik H, Cai Z, et al.
Adv Mater
. 2024 Mar;
36(24):e2312673.
PMID: 38441355
The drive toward non-von Neumann device architectures has led to an intense focus on insulator-to-metal (IMT) and the converse metal-to-insulator (MIT) transitions. Studies of electric field-driven IMT in the prototypical...
4.
Datta S, Chakraborty W, Radosavljevic M
Science
. 2022 Nov;
378(6621):733-740.
PMID: 36395210
Advances in the theory of semiconductors in the 1930s in addition to the purification of germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in 1947 and...
5.
Hu Y, Schlom D, Datta S, Cho K
ACS Appl Mater Interfaces
. 2022 May;
14(22):25670-25679.
PMID: 35609177
The development of high-performance p-type oxides with wide band gap and high hole mobility is critical for the application of oxide semiconductors in back-end-of-line (BEOL) complementary metal-oxide-semiconductor (CMOS) devices. SnO...
6.
Dutta S, Detorakis G, Khanna A, Grisafe B, Neftci E, Datta S
Nat Commun
. 2022 May;
13(1):2571.
PMID: 35546144
Many real-world mission-critical applications require continual online learning from noisy data and real-time decision making with a defined confidence level. Brain-inspired probabilistic models of neural network can explicitly handle the...
7.
Cheema S, Shanker N, Wang L, Hsu C, Hsu S, Liao Y, et al.
Nature
. 2022 Apr;
604(7904):65-71.
PMID: 35388197
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce...
8.
Chakrabarti B, Chan H, Alam K, Koneru A, Gage T, Ocola L, et al.
ACS Nano
. 2021 Mar;
15(3):4155-4164.
PMID: 33646747
Resistance switching in metal-insulator-metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements,...
9.
Si M, Andler J, Lyu X, Niu C, Datta S, Agrawal R, et al.
ACS Nano
. 2020 Aug;
14(9):11542-11547.
PMID: 32833445
In this work, we demonstrate high-performance indium-tin-oxide (ITO) transistors with a channel thickness down to 1 nm and ferroelectric HfZrO as gate dielectric. An on-current of 0.243 A/mm is achieved...
10.
Berggren K, Xia Q, Likharev K, Strukov D, Jiang H, Mikolajick T, et al.
Nanotechnology
. 2020 Jul;
32(1):012002.
PMID: 32679577
Recent progress in artificial intelligence is largely attributed to the rapid development of machine learning, especially in the algorithm and neural network models. However, it is the performance of the...