Qirong Yao
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Explore the profile of Qirong Yao including associated specialties, affiliations and a list of published articles.
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12
Citations
57
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Recent Articles
1.
Yao Q, Park J, Won C, Cheong S, Yeom H
Adv Sci (Weinh)
. 2024 Nov;
12(2):e2408090.
PMID: 39538418
Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high-frequency and low-power devices and recent studies have focused on NDR in van der Waals heterostructures...
2.
Yao Q, Park J, Won C, Cheong S, Yeom H
Adv Sci (Weinh)
. 2023 Dec;
11(3):e2307831.
PMID: 38059812
Here, the formation of type-I and type-II electronic junctions with or without any structural discontinuity along a well-defined 1 nm-wide 1D electronic channel within a van der Waals layer is...
3.
Yao Q, Jung H, Kong K, De C, Kim J, Denlinger J, et al.
Nano Lett
. 2023 Aug;
23(17):7961-7967.
PMID: 37624091
We report on the Tomonaga-Luttinger liquid (TLL) behavior in fully degenerate 1D Dirac Fermions. A ternary van der Waals material NbSiTe incorporates in-plane NbTe chains, which produce a 1D Dirac...
4.
Wang Z, Yao Q, Hu Y, Li C, Hussmann M, Weintrub B, et al.
RSC Adv
. 2022 May;
9(65):38011-38016.
PMID: 35541787
The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (G) is studied. Devices composed of monolayer G, partially deposited on SiO and...
5.
Yao Q, Park J, Oh E, Yeom H
Nano Lett
. 2021 Nov;
21(22):9699-9705.
PMID: 34738815
Although a few physical methods were demonstrated for domain wall engineering in various electronic or ferroic materials with broken discrete symmetries, the direct control over the electronic properties of individual...
6.
Nair S, Gao J, Yao Q, Duits M, Otto C, Mugele F
Natl Sci Rev
. 2021 Oct;
7(3):620-628.
PMID: 34692081
Confocal Raman microscopy is important for characterizing 2D materials, but its low throughput significantly hinders its applications. For metastable materials such as graphene oxide (GO), the low throughput is aggravated...
7.
Wang Z, Yao Q, Neumann C, Borrnert F, Renner J, Kaiser U, et al.
Angew Chem Int Ed Engl
. 2020 Apr;
59(32):13657-13662.
PMID: 32315109
The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to...
8.
Wang Z, Yao Q, Eigler S
Chemistry
. 2019 Dec;
26(29):6484-6489.
PMID: 31851390
In recent years, graphene oxide has been considered as a soluble precursor of graphene for electronic applications. However, the performance lags behind that of graphene due to lattice defects. Here,...
9.
Yao Q, Zhang L, Bampoulis P, Zandvliet H
J Phys Chem C Nanomater Interfaces
. 2018 Nov;
122(44):25498-25505.
PMID: 30450151
HfSe is a very good candidate for a transition metal dichalcogenide-based field-effect transistor owing to its moderate band gap of about 1 eV and its high-κ dielectric native oxide. Unfortunately,...
10.
van Bremen R, Yao Q, Banerjee S, Cakir D, Oncel N, Zandvliet H
Beilstein J Nanotechnol
. 2017 Oct;
8:1952-1960.
PMID: 29046843
We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS). At room temperature and low deposition rates we have...