Po-Tsun Liu
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Explore the profile of Po-Tsun Liu including associated specialties, affiliations and a list of published articles.
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12
Citations
16
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Recent Articles
1.
Liu P, Chiu Y, Hsu C, Gan K, Ruan D, Su S, et al.
ACS Appl Mater Interfaces
. 2025 Feb;
17(8):12495-12506.
PMID: 39936447
Computing-in-memory (CIM) technology for edge computing systems demands memory devices that are not only fast but also capable of being easily integrated into stackable manufacturing processes. To address these requirements,...
2.
Li Z, Chiang T, Kuo P, Tu C, Kuo Y, Liu P
Adv Sci (Weinh)
. 2023 Jan;
10(9):e2205481.
PMID: 36658711
In this work, the authors demonstrate a novel vertically-stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p-channel polycrystalline silicon (poly-Si) and n-channel amorphous indium tungsten...
3.
Ruan D, Liu P, Chiu Y, Kuo P, Yu M, Gan K, et al.
RSC Adv
. 2022 May;
8(13):6925-6930.
PMID: 35540334
This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion...
4.
Fan W, Liu P, Kuo P, Chang C, Liu I, Kuo Y
Nanomaterials (Basel)
. 2021 Nov;
11(11).
PMID: 34835834
The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor...
5.
Hsu C, Liu P, Gan K, Ruan D, Sze S
Nanomaterials (Basel)
. 2021 Sep;
11(9).
PMID: 34578520
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen...
6.
Gan K, Liu P, Ruan D, Hsu C, Chiu Y, Sze S
Nanotechnology
. 2020 Oct;
32(3):035203.
PMID: 33022668
The characteristics of conductive-bridging random access memory (CBRAM) with amorphous indium-tungsten-zinc-oxide (a-InWZnO) switching layer and copper (Cu) ion-supply layer were prepared by sputtering. It was found that the doping ratio...
7.
Gan K, Liu P, Chien T, Ruan D, Sze S
Sci Rep
. 2019 Oct;
9(1):14141.
PMID: 31578400
The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/GaO/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such...
8.
Ruan D, Liu P, Yu M, Chien T, Chiu Y, Gan K, et al.
ACS Appl Mater Interfaces
. 2019 Jun;
11(25):22521-22530.
PMID: 31190532
In this study, hydrogen peroxide (HO) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without...
9.
Kuo P, Chang C, Liu I, Liu P
Sci Rep
. 2019 May;
9(1):7579.
PMID: 31110283
In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. The influences of...
10.
Jheng B, Liu P, Wu M
Nanoscale Res Lett
. 2014 Aug;
9(1):331.
PMID: 25114632
In this study, a non-selenized CuInGaSe2 (CIGS) solar device with textured zinc oxide (ZnO) antireflection coatings was studied. The ZnO nanostructure was fabricated by a low-temperature aqueous solution deposition method....