Phanwadee Chureemart
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Explore the profile of Phanwadee Chureemart including associated specialties, affiliations and a list of published articles.
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5
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8
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Recent Articles
1.
Pantasri W, Meo A, Chureemart P, Suntives A, Pituso K, Chantrell R, et al.
Sci Rep
. 2025 Jan;
15(1):2776.
PMID: 39843938
Heat assisted magnetic recording (HAMR) technology is considered a solution to overcome the limitations of perpendicular magnetic recording and enable higher storage densities. To improve and understand the performance of...
2.
Saenphum N, Khamtawi R, Chureemart J, Chantrell R, Chureemart P
Sci Rep
. 2024 Oct;
14(1):23925.
PMID: 39397047
In this study, we investigate the effect of temperature on the performance of a read sensor by utilizing an atomistic model coupled with a spin transport model. Specifically, we study...
3.
Cao L, Ruta S, Khamtawi R, Chureemart P, Zhai Y, Evans R, et al.
J Phys Condens Matter
. 2024 Feb;
36(30).
PMID: 38354418
We present an experimental and computational investigation the Neodymium thickness dependence of the effective damping constant (αeff) in/Neodymium (Py/Nd) bilayers. The computational results show that the magnetic damping is strongly...
4.
Sampan-A-Pai S, Phoomatna R, Boonruesi W, Meo A, Chureemart J, Evans R, et al.
Sci Rep
. 2023 Feb;
13(1):2637.
PMID: 36788254
The discovery of magnetization switching via spin transfer torque (STT) in PMA-based MTJs has led to the development of next-generation magnetic memory technology with high operating speed, low power consumption...
5.
Meo A, Chureemart J, Chantrell R, Chureemart P
Sci Rep
. 2022 Mar;
12(1):3380.
PMID: 35233036
We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit...
6.
Meo A, Chureemart P, Wang S, Chepulskyy R, Apalkov D, Chantrell R, et al.
Sci Rep
. 2017 Dec;
7(1):16729.
PMID: 29196700
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs)...