Min-Hung Lee
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Explore the profile of Min-Hung Lee including associated specialties, affiliations and a list of published articles.
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10
Citations
15
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Recent Articles
1.
Liu C, Hsiang K, Li Z, Chang F, Lou Z, Lee J, et al.
ACS Appl Mater Interfaces
. 2025 Feb;
17(9):14342-14349.
PMID: 39976292
The fusion of volatile and nonvolatile memory within a complementary-dynamic random-access memory (C-DRAM) in one cell is proposed with antiferroelectric-like hafnium-zirconium oxide with dual function characteristics of DRAM and storage...
2.
Liao C, Hsiang K, Lou Z, Lin C, Tseng Y, Tseng H, et al.
IEEE Trans Ultrason Ferroelectr Freq Control
. 2022 Apr;
69(6):2214-2221.
PMID: 35380960
An ultralow program/erase voltage ( |V| = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field ( E ) concept for a...
3.
Hsiang K, Liao C, Wang J, Lou Z, Lin C, Chiang S, et al.
Nanomaterials (Basel)
. 2021 Oct;
11(10).
PMID: 34685126
Ferroelectric (FE) HfZrO is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study...
4.
Chang S, Teng C, Lin Y, Wu T, Lee M, Lin B, et al.
ACS Appl Mater Interfaces
. 2021 Jun;
13(24):29212-29221.
PMID: 34121385
HfZrO (HZO) is a complementary metal-oxide-semiconductor (CMOS)-compatible ferroelectric (FE) material with considerable potential for negative capacitance field-effect transistors, ferroelectric memory, and capacitors. At present, however, the deployment of HZO in...
5.
Hsu C, Wu C, Lee M, Wang J, Chen Y, Chang M
Surg Endosc
. 2019 Sep;
34(2):1006-1011.
PMID: 31482351
Background: Conventional lesion-up colorectal ESD has the potential risk of iatrogenic perforation due to the knife's direction toward the muscular layer of the bowel wall. If we rotate the endoscope...
6.
Chen P, Chen K, Tang M, Wang Z, Chou Y, Lee M
Sensors (Basel)
. 2018 Aug;
18(9).
PMID: 30149580
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition...
7.
Chen K, Qiu Y, Tang M, Lee C, Dai Y, Lee M, et al.
J Nanosci Nanotechnol
. 2018 Jun;
18(10):6873-6878.
PMID: 29954505
In this paper, we investigate the negative-capacitance fin field-effect (NC-FinFET) and extend the design beyond the 7-nm technology node. A 7-nm-node NC-FinFET is presented using the Landau-Khalatnikov equation and the...
8.
Lee Y, Yang Z, Chen P, Hsieh Y, Yao Y, Liao M, et al.
Opt Express
. 2018 Feb;
26(2):A110.
PMID: 29401900
We present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment," [Opt. Express22, A1589 (2014)].
9.
Lee Y, Yang Z, Chen P, Hsieh Y, Yao Y, Liao M, et al.
Opt Express
. 2015 Jan;
22 Suppl 6:A1589-95.
PMID: 25607316
In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly...
10.
Lee M, Chen P
Nanoscale Res Lett
. 2012 Jun;
7(1):307.
PMID: 22709630
Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth,...